IGBT Physical Model Calibration for Accurate Transient Simulation

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Solution Overview

Problem

Current methods for extracting IGBT physical model parameters are either inaccurate due to large errors or cumbersome due to tedious extraction steps, failing to meet precision and operability requirements for simulation accuracy.

Innovation Solution

A method that involves obtaining initial values and correction ranges for IGBT physical model parameters by correlating dynamic and static features with experiment measurements, using theoretical calculations and empirical formulas to correct parameters step-by-step, focusing on temperature effects and coupling influences.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of operation

If parameters are estimated by combining directly measured electrical parameters with empirical formulas, then the extraction process is simple, but the accuracy of parameter extraction deteriorates with large errors

Engineering Contradiction:
Improveextraction process simplicityVSAvoidparameter extraction accuracy
Core Design Contradiction:
Ease of operationVSMeasurement precision

Solution Approach 1:

The patent introduces an intermediary optimization process that uses simulated electrical parameters as a bridge between direct measurements and physical model parameters. The method compares measured electrical parameters with simulated ones, calculates differences, and iteratively adjusts physical model parameters to minimize these differences, thereby achieving accurate parameter extraction without direct complex measurements

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The patent implements a feedback mechanism where the difference between measured and simulated electrical parameters is continuously calculated and used to adjust the physical model parameters. This iterative feedback process refines the parameter values until the simulated parameters match the measured ones within acceptable tolerance, ensuring high accuracy while maintaining operational simplicity

Inventive Principle:
Principle #23Feedback

2Measurement precision

If parameters are indirectly extracted through designed circuits, then the accuracy of parameter extraction improves, but the device complexity and extraction steps increase becoming tedious

Engineering Contradiction:
Improveparameter extraction accuracyVSAvoidextraction circuit complexity
Core Design Contradiction:
Measurement precisionVSDevice complexity

Solution Approach 1:

The patent extracts and isolates the essential comparison function between measured and simulated parameters, removing the need for complex extraction circuits. By focusing only on the critical comparison and optimization steps, the method achieves accurate parameter extraction using simple measurement circuits while eliminating unnecessary circuitry

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The patent replaces the mechanical/electrical extraction circuit system with a computational optimization system. Instead of using complex physical circuits to directly extract parameters, the method uses computer-based simulation and iterative calculation to determine parameter values, substituting physical complexity with computational processing

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

3Measurement precision

If parameters are indirectly extracted through designed circuits, then the accuracy of parameter extraction improves, but the ease of operation deteriorates with poor operability

Engineering Contradiction:
Improveparameter extraction accuracyVSAvoidextraction process operability
Core Design Contradiction:
Measurement precisionVSEase of operation

Solution Approach 1:

The patent merges the measurement process with the optimization process into a unified workflow. By combining direct electrical parameter measurements with automated simulation comparison and parameter adjustment in a single integrated process, the method improves operability while maintaining accuracy, eliminating the need for separate complex extraction procedures

Inventive Principle:
Principle #5Merging (Combining)

Data Source

PatentUS11875869B2Insulated gate bipolar transistor physical model
Publication Date: 2024.01.16 NAVAL UNIV OF ENG PLA
  • US11875869B2 patent drawing
  • US11875869B2 patent drawing
  • US11875869B2 patent drawing

AI summary

An IGBT physical model parameter extraction method includes obtaining an initial value and a transformation range of an IGBT physical model parameter; and correcting a model parameter by means of a correspondence between IGBT dynamic and static features and the IGBT physical model parameter and in combination with an experiment measurement result of the IGBT physical model parameter.