IGBT Module Heat Dissipation Layer Thickness Ratio
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Solution Overview
Problem
Conventional IGBT modules with direct bonded copper (DBC) substrates have limited heat-conducting ability, leading to inefficient heat dissipation from IGBT chips, which can result in performance deterioration and damage due to excessive temperature.
Innovation Solution
An IGBT module with a heat dissipation structure featuring a specific layer thickness ratio, including an insulating layer less than 0.2 mm, a circuit layer between 1.5 mm and 3 mm, and a thickness ratio of the circuit layer to the insulating layer greater than or equal to 7.5:1, utilizing materials like ceramic, metal, or conductive polymer composites, and bonding layers for enhanced heat transfer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If a conventional DBC substrate with multilayer structure is used, then the structural integrity and electrical insulation are maintained, but the heat-conducting ability is limited and heat dissipation efficiency deteriorates
Solution Approach 1:
The patent divides the substrate into two separate layers: a DBC substrate for structural integrity and electrical insulation, and a separate heat dissipation layer with high thermal conductivity. This segmentation allows each layer to optimize its specific function without compromising the other, resolving the contradiction between structural requirements and heat dissipation efficiency.
Solution Approach 2:
The patent employs composite material structure by combining the DBC substrate (ceramic + copper) with a separate heat dissipation layer made of high thermal conductivity materials. This composite approach enables the system to simultaneously achieve structural stability, electrical insulation, and superior heat conduction, overcoming the limitations of conventional single-structure substrates.
2Reliability
If the insulating layer thickness is increased, then electrical insulation performance is improved, but heat transfer path length increases and heat dissipation efficiency deteriorates
Solution Approach 1:
The patent optimizes the thickness parameter of the insulating layer to a specific range that simultaneously satisfies electrical insulation requirements and heat transfer efficiency. By precisely controlling this parameter, the system achieves both reliable electrical insulation and effective heat dissipation, resolving the contradiction between these two opposing requirements.
3Power
If the circuit layer thickness is increased, then electrical current carrying capacity is improved, but the overall module size increases and heat dissipation path length increases
Solution Approach 1:
The patent separates the electrical conduction function (circuit layer) from the heat dissipation function (dedicated heat dissipation layer). This allows the circuit layer to be optimized for current carrying capacity while the heat dissipation layer handles thermal management, resolving the contradiction between power capacity and heat dissipation efficiency.
Solution Approach 2:
The patent introduces a dedicated heat dissipation layer as an intermediary between the circuit layer and the external environment. This intermediary layer provides an efficient thermal conduction path without interfering with the electrical function of the circuit layer, enabling simultaneous optimization of both power capacity and heat dissipation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively dissipates heat generated by IGBT chips, reducing their operating temperature and preventing performance degradation and damage.
Implementation Method 1
heat dissipation layer 15... heat-conducting ability... heat generated by the layer 11A of IGBT chips, it cannot be timely transferred to the heat dissipation layer 15A
Data Source
AI summary
An IGBT module with a heat dissipation structure having a specific layer thickness ratio includes a layer of IGBT chips, an upper bonding layer, a circuit layer, an insulating layer, and a heat dissipation layer. The insulating layer is disposed on the heat dissipation layer, the circuit layer is disposed on the insulating layer, the upper bonding layer is disposed on the circuit layer, and the layer of IGBT chips is disposed on the upper bonding layer. A thickness of the insulating layer is less than 0.2 mm, a thickness of the circuit layer is between 1.5 mm and 3 mm, and a thickness ratio of the circuit layer to the insulating layer is greater than or equal to 7.5:1.