IGBT-Superjunction MOSFET Pairing for Light-Load Conduction
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Solution Overview
Problem
IGBTs experience high conduction losses at low currents due to their voltage threshold and lack of reverse current conduction capabilities, unlike MOSFETs, which limits their effectiveness in low-amperage applications.
Innovation Solution
Coupling an IGBT with a super-junction MOSFET on the same substrate, sharing gate and collector/drain connections, and incorporating a fast recovery body diode in the super-junction MOSFET to act as a freewheeling diode, allowing for improved low-current conduction and reverse current handling.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If a traditional IGBT is used, then high current handling capability is achieved, but conduction losses increase significantly at low currents due to voltage threshold
Solution Approach 1:
The patent combines an IGBT and a MOSFET into a single integrated device structure, allowing the IGBT to handle high current while the MOSFET handles low current, thus resolving the contradiction between high current capability and low current efficiency
Solution Approach 2:
The device dynamically switches between IGBT and MOSFET conduction modes depending on the current level, with the MOSFET taking over at low currents to eliminate threshold voltage losses, while the IGBT dominates at high currents for optimal power handling
2Power
If a traditional IGBT is used, then high current conductance is achieved, but reverse current conduction is blocked
Solution Approach 1:
The patent merges an IGBT with a MOSFET that has an inherent body diode, enabling the combined device to conduct current in both forward and reverse directions while maintaining high current handling capability
Solution Approach 2:
The integrated device performs multiple functions: the IGBT provides high current forward conduction, while the MOSFET body diode provides reverse current conduction, making the device versatile for bidirectional current applications
Data Source
AI summary
An apparatus comprising an insulated gate bipolar transistor and a super junction metal-oxide semiconductor field effect transistor wherein the insulated gate bipolar transistor and the super-junction metal-oxide semiconductor field effect transistor are electrically and optionally structurally coupled.