IGBT P-Barrier Doping Layout for Breakdown and On-Resistance
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Solution Overview
Problem
Existing semiconductor devices face challenges in achieving stable characteristics due to potential breakdowns during high current operations, particularly in insulated gate bipolar transistors (IGBTs), which are prone to dynamic avalanche breakdown and increased on-resistance when trying to increase current density.
Innovation Solution
The semiconductor device incorporates a unique structure with alternating conductivity type semiconductor regions, including a p-barrier layer with controlled impurity concentration profiles, specifically a higher concentration in the fourth partial region to manage electric field concentration and suppress breakdown, allowing for efficient depletion at positions away from the trench bottom, thereby stabilizing operation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If current density is increased in conventional IGBTs, then power handling capability is improved, but dynamic avalanche breakdown occurs and on-resistance increases
Solution Approach 1:
The patent applies local quality by creating a p-barrier layer with non-uniform impurity concentration distribution. The fourth partial region has higher impurity concentration than the fifth partial region, creating localized electric field management zones. This allows different regions to handle different electrical stress conditions, enabling high current density operation while preventing breakdown through localized electric field control at critical interfaces.
Solution Approach 2:
The patent changes the impurity concentration parameter within the p-barrier layer by creating regions with different doping levels. The fourth partial region has higher impurity concentration while the fifth partial region has lower impurity concentration. This parameter variation allows optimization of electric field distribution, enabling the device to achieve both high power handling and breakdown resistance simultaneously.
2Power
If current density is increased in conventional IGBTs, then power handling capability is improved, but on-resistance increases
Solution Approach 1:
The patent creates localized quality variations through the p-barrier layer structure where the fourth partial region with higher impurity concentration is positioned at critical interfaces. This local quality enhancement allows efficient depletion region formation that reduces on-resistance in high current paths while maintaining overall device capability for high power operation.
Solution Approach 2:
The p-barrier layer with controlled impurity concentration profiles is formed in advance during manufacturing, creating pre-optimized depletion regions before the device operates. The fourth partial region with higher impurity concentration is prepared beforehand to facilitate efficient charge carrier management during high current operation, reducing on-resistance before the harmful effects can occur.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design enhances breakdown resistance and reduces on-resistance, enabling stable operation with high current density while maintaining low on-voltage and improving manufacturing productivity.
Implementation Method 1
a higher concentration in the fourth partial region to manage electric field concentration and suppress breakdown
Implementation Method 2
thereby stabilizing operation
Data Source
AI summary
According to one embodiment, a semiconductor device includes a first electrode, a second electrode, a third electrode, a semiconductor member, and an insulating member. The semiconductor member includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a third semiconductor region of the first conductivity type, a fourth semiconductor region of the first conductivity type, a fifth semiconductor region of the second conductivity type, and a sixth semiconductor region of the second conductivity type. The fifth semiconductor region includes a fourth partial region and a fifth partial region. The fourth partial region is located between the first partial region and the third electrode in a first direction. The fifth partial region is located between the third partial region and the fourth semiconductor region in the first direction.