IGBT Temperature-Sensing Diode Layout for Accurate Thermal Feedback
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Solution Overview
Problem
Semiconductor devices used in in-vehicle inverters, such as IGBTs, face challenges in maintaining optimal temperature due to high-speed switching, leading to heat generation, and existing temperature sensing diodes may not effectively manage this, affecting device performance and reliability.
Innovation Solution
A semiconductor device configuration that includes a trench gate insulated gate bipolar transistor (IGBT) with a temperature sensing diode and protection diode, where the temperature sensing diode is integrated with the emitter electrode, and the protection diode is connected in antiparallel, enhancing temperature detection accuracy and reducing surge effects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If a temperature sensing diode is mounted on the switching element to detect temperature, then temperature detection capability is improved, but the device complexity and size increase
Solution Approach 1:
The temperature sensing diode is integrated directly into the emitter electrode structure of the IGBT, merging the temperature sensing function with the existing electrode. This eliminates the need for separate mounting structures and reduces overall device complexity while maintaining temperature detection capability
Solution Approach 2:
The emitter electrode serves dual functions: as the standard electrical connection element and as the mounting structure for the temperature sensing diode. This multi-functionality reduces the number of separate components needed and simplifies the overall device structure
2Productivity
If high-speed switching is performed to improve productivity, then current switching speed is improved, but heat generation increases
Solution Approach 1:
The temperature sensing diode provides real-time temperature feedback from the IGBT, enabling monitoring and control of heat generation. This feedback mechanism allows for thermal management that prevents excessive temperature rise during high-speed switching operations
Solution Approach 2:
The temperature sensing diode is positioned to detect temperature at the emitter electrode where heat is generated, enabling early detection of temperature rise before it becomes problematic. This preliminary detection allows for preventive thermal management
3Volume of moving object
If the temperature sensing diode is integrated with the emitter electrode to reduce device size, then device compactness is improved, but manufacturing precision requirements increase
Solution Approach 1:
The emitter electrode is divided into functional regions, with specific areas designated for temperature sensing diode integration. This segmentation approach provides clear manufacturing guides and reduces precision requirements by defining exact integration zones
Solution Approach 2:
The emitter electrode structure is optimized locally at the integration region to accommodate the temperature sensing diode. This local optimization allows for easier integration with standard manufacturing processes while maintaining overall device compactness
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration improves temperature detection accuracy, reduces on-resistance, and decreases the size of the semiconductor device while maintaining performance, thereby enhancing reliability and cost-effectiveness.
Implementation Method 1
a temperature sensing diode configured to detect the temperature of the switching element
Implementation Method 2
the protection diode is connected in antiparallel, enhancing temperature detection accuracy and reducing surge effects
Data Source
AI summary
This semiconductor device is provided with: a semiconductor layer; an insulating film which is formed on the surface of the semiconductor layer; a main cell region which comprises a main cell, while being provided in the semiconductor layer; and a temperature-sensing diode for sensing the temperature, the diode being provided in a region other than the main cell region. The temperature-sensing diode comprises a diode cell which is composed of: a first semiconductor region of a first conductivity type; and a second semiconductor region of a second conductivity type. The second semiconductor region is formed into a ring shape so as to surround the first semiconductor region. The inner lateral surface of the second semiconductor region is joined with the first semiconductor region.