IGBT Wire Bonding Heat Management via Dummy Cells
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The current semiconductor devices face challenges in managing the calorific value at the central portion of the wire bonding area, which affects the short circuit safe operating area (SCSOA), as current tends to concentrate here, leading to potential peeling and breakage of wires due to temperature changes.
Innovation Solution
Incorporating dummy cells that do not perform bipolar operations below the central portion of the wire bonding area, alongside IGBT cells with reduced current-carrying capacity in this region, to distribute current more evenly and reduce heat concentration.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If current-carrying capacity of cells below wire bonding area is reduced, then calorific value in wire bonding area is suppressed and SCSOA is improved, but current concentration at central portion of wire bonding area remains and wire bonding reliability is compromised
Solution Approach 1:
The patent applies local quality by creating different cell configurations in different regions of the semiconductor device. Specifically, dummy cells are placed only at the central portion of the wire bonding area, while peripheral regions maintain normal cell structures. This localized differentiation allows the central area to have reduced current-carrying capacity (suppressing calorific value) while peripheral areas maintain normal current conduction, thus resolving the contradiction between suppressing heat and maintaining overall device performance.
2Temperature
If dummy cells are added at central portion of wire bonding area, then calorific value at central portion is suppressed, but device complexity increases
Solution Approach 1:
The patent segments the wire bonding area into distinct zones: a central portion containing dummy cells and peripheral portions with normal cells. This segmentation allows targeted thermal management at the critical central area without affecting the entire device structure. The dummy cells are isolated to specific regions, making the complexity localized rather than global, thus resolving the contradiction between temperature control and device simplicity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively suppresses the calorific value at the central wire bonding area, enhancing the SCSOA by distributing current and heat more uniformly, thereby improving the semiconductor device's operational safety and longevity.
Implementation Method 1
the calorific value of the central portion of the wire bonding area can be suppressed
Data Source
AI summary
A semiconductor device capable of suppressing the calorific value at the central portion of a wire bonding area is provided. A semiconductor device includes a plurality of IGBT cells in a cell area. An emitter electrode serves as a current path when a plurality of IGBT cells are in conductive state, and is formed to cover a plurality of IGBT cells. A wire is bonded to the emitter electrode. A dummy cell which does not perform a bipolar operation, is formed at least below a central portion of a wire bonding area which is an area at which the wire and the emitter electrode are bonded.