IGZO Channel ALD Sub-Cycles for Precise Composition Control
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Solution Overview
Problem
Existing atomic layer deposition methods fail to effectively enhance the performance of IGZO layers by precisely controlling the composition ratio of indium, gallium, and zinc, leading to suboptimal film quality and limited applicability to various transistor devices.
Innovation Solution
An atomic layer deposition method that sequentially deposits indium oxide, gallium oxide, and zinc oxide sub-cycles to form an IGZO channel layer, allowing for precise control of the composition ratio and improved film quality.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional atomic layer deposition methods are used to deposit IGZO layers, then the deposition process is simple, but the film quality and performance of transistor devices are suboptimal due to inability to precisely control composition ratio
Solution Approach 1:
The patent divides the IGZO layer deposition into separate sub-cycles for indium oxide, gallium oxide, and zinc oxide. Each metal oxide is deposited independently through distinct ALD cycles, allowing precise control over the composition ratio of each element in the final IGZO layer.
Solution Approach 2:
The patent modifies the deposition parameters by introducing separate deposition cycles for each metal oxide with controlled cycle counts. By adjusting the number of cycles for InO, GaO, and ZnO deposition, the composition ratio can be precisely tuned to achieve optimal film quality and device performance.
2Manufacturing precision
If separate sub-cycles for indium oxide, gallium oxide, and zinc oxide deposition are implemented, then the film quality of IGZO channel layer is enhanced, but the deposition process complexity increases
Solution Approach 1:
The deposition process is segmented into distinct sub-cycles for each metal oxide (InO, GaO, ZnO), with each sub-cycle consisting of specific ALD steps. This segmentation enables independent optimization of each metal oxide deposition to achieve superior film quality.
Solution Approach 2:
The patent performs preliminary deposition of each metal oxide layer in sequence before forming the final IGZO channel layer. By pre-depositing controlled amounts of each metal oxide through separate sub-cycles, the composition is optimized before the final layer formation, ensuring high film quality.
3Adaptability or versatility
If the composition ratio of indium, gallium, and zinc is precisely controlled through separate sub-cycles, then the applicability to various transistor devices is improved, but the operation complexity increases
Solution Approach 1:
The patent enables versatile application to different transistor devices by allowing independent adjustment of deposition cycle parameters for each metal oxide. By changing the number of cycles for InO, GaO, and ZnO deposition, the composition ratio can be optimized for specific transistor device requirements.
Solution Approach 2:
The segmented deposition process with controllable composition ratios provides universal applicability to various transistor device types. The same basic process structure can be adapted to different devices by simply adjusting the deposition cycle parameters, making the method versatile across multiple applications.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enhances the film quality of IGZO channel layers, improving the performance of transistor devices and enabling versatility across different transistor types by accurately adjusting the indium, gallium, and zinc composition.
Implementation Method 1
an atomic layer deposition (ALD) method for forming an IGZO channel layer of a transistor device
Data Source
AI summary
The present inventive concept relates to an atomic layer deposition (ALD) method for forming an IGZO channel layer of a transistor device the method comprising: a deposition cycle step of performing a deposition cycle for depositing an IGZO channel layer on a substrate; and a repeat step of repeatedly performing the deposition cycle step until the IGZO channel layer is formed with a predetermined thickness, wherein in the deposition cycle step, the IGZO channel layer is formed by performing an indium oxide sub-cycle for depositing indium oxide (InO), a gallium oxide sub-cycle for depositing gallium oxide (GaO), and a zinc oxide sub-cycle for depositing zinc oxide (ZnO).