IGZO Oxide Material Annealing for Resistivity Control
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Solution Overview
Problem
Existing methods for producing IGZO-based oxide materials struggle to achieve a balanced electrical resistivity and carrier mobility suitable for thin film transistors, as the properties of these materials are heavily influenced by oxygen vacancy levels, making it difficult to consistently produce materials that are neither conductors nor semiconductors effectively.
Innovation Solution
An IGZO-based oxide material with a composition formula of In2-xGaxZnO4-δ, where 0.75<x<1.10 and 0 <δ≦1.29161×exp(−x/0.11802)+0.00153, is formed through a method involving annealing in an oxygen-containing atmosphere at temperatures between 1200° C. to 1400° C, with a controlled temperature decrease rate to maintain a single phase crystal structure, thereby controlling oxygen vacancy levels and achieving desired resistivity and mobility.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If annealing temperature is increased to 1350°C or higher to form crystalline IGZO-based oxide material, then the material can achieve high carrier mobility, but the production cost and energy consumption increase significantly
Solution Approach 1:
The patent changes the annealing temperature parameter from the conventional 1350°C or higher to a lower range of 1000°C to 1200°C, while simultaneously optimizing the atmosphere composition (oxygen partial pressure) to achieve the desired material properties at reduced energy consumption
Solution Approach 2:
The patent employs a controlled oxygen-containing atmosphere with specific oxygen partial pressure during annealing, creating an optimized environment that enables crystalline IGZO formation at lower temperatures than conventional methods, thereby reducing energy consumption while maintaining material quality
2Stability of the object's composition
If rapid cooling is applied after high-temperature annealing to form crystalline structure, then the material achieves desired crystal phase, but the production process complexity increases
Solution Approach 1:
The patent enables the material to self-organize into the desired crystalline phase through controlled annealing in an oxygen-containing atmosphere without requiring rapid cooling or complex post-processing steps, allowing the system to naturally achieve the stable crystal structure at lower temperatures
3Reliability
If oxygen vacancy level is increased to enhance electrical conductivity, then the material becomes more conductive, but the material loses semiconductor properties and becomes a degenerate semiconductor or conductor
Solution Approach 1:
The patent optimizes the oxygen partial pressure parameter during annealing to precisely control the oxygen vacancy concentration, achieving a balanced state where the material maintains both adequate electrical conductivity and semiconductor properties, avoiding the degenerate semiconductor state
Solution Approach 2:
The patent establishes a controlled atmosphere process where oxygen partial pressure is regulated to maintain appropriate oxygen vacancy levels, creating a feedback mechanism that prevents excessive oxygen deficiency and preserves semiconductor characteristics while ensuring sufficient conductivity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach results in IGZO-based oxide materials with resistivity ranging from 1×102 Ω·cm to 1×109 Ω·cm, suitable for use as active layers in thin film transistors, with controlled carrier concentration and mobility, effectively balancing semiconductor and conductor properties.
Implementation Method 1
annealing, in an oxygen-containing atmosphere, a mixed material including In, Ga and Zn, under conditions of a maximum annealing temperature of from 1200° C. to 1400° C.
Implementation Method 2
annealing, in an oxygen-containing atmosphere, a mixed material including In, Ga and Zn
Data Source
AI summary
The invention provides an IGZO-based oxide material and a method of producing the same, the IGZO-based oxide material being represented by a composition formula of In2-xGaxZnO4-δ, where 0.75<x<1.10 and 0<δ≦1.29161×exp(−x/0.11802)+0.00153, and being formed from a single phase of IGZO having a crystal structure of YbFe2O4.