OLED Display Panel Insulating Layers for IGZO Stability
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Solution Overview
Problem
The poor stability of indium gallium zinc oxide (IGZO) transistors in OLED display panels affects the performance of driver and pixel circuits, leading to instability in the display panel's performance.
Innovation Solution
A display panel design that includes a first transistor with a silicon active layer and a second transistor with an oxide semiconductor active layer, where the oxygen concentration in the insulating layers is strategically adjusted to enhance the stability of the second transistor, preventing deficiencies and ensuring normal function.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-generated harmful factors
If IGZO is used as the active layer material for the second transistor to reduce leakage current, then the transistor's leakage current is reduced, but the stability of the transistor deteriorates
Solution Approach 1:
The patent applies different oxygen concentrations to different insulating layers surrounding the oxide semiconductor active layer. The first insulating layer has a lower oxygen concentration to prevent oxygen deficiency in the active layer, while the second insulating layer has a higher oxygen concentration to ensure normal transistor function. This local differentiation of material properties resolves the contradiction between reducing leakage current and maintaining stability.
Solution Approach 2:
The patent changes the oxygen concentration parameter of the insulating layers to improve transistor stability. Specifically, the first insulating layer is designed with an oxygen concentration of 10-50 at%, while the second insulating layer has an oxygen concentration of 50-80 at%. This parameter optimization prevents oxygen deficiency-related instability while maintaining the low leakage current特性 of IGZO transistors.
2Reliability
If the oxygen concentration in the first insulating layer is increased to ensure normal function, then the transistor function is maintained, but the second active layer may be affected by oxygen deficiency
Solution Approach 1:
The patent implements local quality differentiation by assigning different oxygen concentrations to the first and second insulating layers. The first insulating layer (closer to the active layer) has lower oxygen concentration (10-50 at%) to prevent oxygen deficiency, while the second insulating layer has higher oxygen concentration (50-80 at%) to ensure proper transistor function. This spatial differentiation of material composition resolves the contradiction.
Solution Approach 2:
The first insulating layer with optimized lower oxygen concentration serves as a protective buffer layer that prevents oxygen deficiency from affecting the oxide semiconductor active layer before the harm can occur. This beforehand cushioning approach ensures the active layer maintains its compositional stability while the second insulating layer provides the necessary oxygen environment for transistor function.
Data Source
AI summary
Provided are a display panel and a display device. The display panel includes a base substrate; a first transistor, a second transistor and a third transistor, where the first transistor, the second transistor and the third transistor are formed on the base substrate, the first transistor includes a first active layer, a first gate, a first source, and a first drain, the first active layer contains silicon, the second transistor includes a second active layer, a second gate, a second source, and a second drain, and the second active layer contains an oxide semiconductor; and a first insulating layer and a second insulating layer, where the first insulating layer is disposed on one side of the second active layer facing away from the base substrate and between the second gate and the second active layer.