IGZO Active Layer Plasma Cleaning for Element Redistribution
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Solution Overview
Problem
The existing manufacturing process for IGZO active layers in oxide thin film transistors results in redistribution of elements like gallium, zinc, and indium due to acidic etching solutions, affecting the performance of the IGZO film.
Innovation Solution
A plasma cleaning treatment using argon or helium gas is applied to the IGZO film surface to adjust the elemental content, increasing gallium and zinc while decreasing oxygen and indium, thereby improving the electrical properties of the IGZO active layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If wet etching is used to form source and drain electrodes, then metal residue can be removed, but element redistribution occurs on the IGZO film surface
Solution Approach 1:
The patent applies plasma treatment to the IGZO film surface before wet etching to create a protective layer or modify surface properties, preventing element redistribution during subsequent etching. This preliminary action addresses the composition stability issue while allowing wet etching to proceed for metal residue removal.
Solution Approach 2:
The patent introduces plasma as an intermediary treatment between film deposition and wet etching. This intermediary step modifies the IGZO surface properties without being consumed in the etching process, thereby preventing harmful element redistribution while enabling effective metal residue removal.
2Reliability
If additional etching time is added to ensure no metal residue, then metal residue is removed, but IGZO film surface contacts etching liquid causing element redistribution
Solution Approach 1:
By applying plasma treatment before wet etching, the patent creates conditions that allow for more efficient etching, reducing the need for prolonged additional etching time. The plasma-modified surface enables complete metal residue removal in a shorter duration, addressing both reliability and time loss concerns.
3Reliability
If plasma cleaning is applied to adjust element content, then electrical properties are improved, but processing time is increased
Solution Approach 1:
The patent optimizes plasma treatment parameters (power, gas flow rate, pressure, treatment time) to achieve the desired element content adjustment on IGZO surface with minimal processing time. By carefully controlling these parameters, the patent improves electrical properties while minimizing the time penalty associated with plasma cleaning.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The plasma cleaning treatment effectively reduces the performance impact caused by wet etching, enhancing the electrical performance of the IGZO film by adjusting the surface content of gallium, zinc, and indium.
Implementation Method 1
performing a plasma cleaning treatment on a surface of the IGZO film by using an argon gas or a helium gas
Data Source
AI summary
A manufacturing method for an IGZO active layer is disclosed. The method comprises steps of: after depositing a first metal layer and a gate insulation layer on a substrate, depositing an IGZO material on the gate insulation layer, and forming an IGZO film; and performing a plasma cleaning treatment on a surface of the IGZO film by using an argon gas or a helium gas to adjust element contents on the surface of the IGZO film, and forming an IGZO active layer. The present invention also correspondingly discloses a manufacturing method for an oxide thin film transistor. By implementing the embodiments of the present invention, the elements on the film surface of the IGZO active layer can be adjusted to improve electrical properties.