IGZO Semiconductor Structure with Opaque Resin Shielding
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Solution Overview
Problem
IGZO thin film transistor structures suffer from photo leakage current and degradation due to light, moisture, and air exposure, leading to increased leakage current over time.
Innovation Solution
A metal oxide semiconductor structure is designed with a substrate, gate electrode, gate insulation layer, IGZO layer, source and drain electrodes, first and second passivation layers, and an opaque resin layer to prevent light, moisture, and air from reaching the channel, using silicon compounds and opaque metals for enhanced shielding.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a transparent resin layer is used for protection, then the structure is simple and easy to manufacture, but light can penetrate through causing photo leakage current
Solution Approach 1:
The patent uses a composite protective structure consisting of multiple layers: a lower passivation layer (silicon nitride), an intermediate passivation layer (silicon oxide), and an upper resin layer. This composite structure combines the light-blocking properties of silicon nitride with the protective properties of the resin layer, achieving both protection against photo leakage current and ease of manufacture.
2Device complexity
If only a single passivation layer is used, then the device complexity is reduced, but moisture and air penetration causes channel degradation
Solution Approach 1:
The patent divides the protective function into multiple segments: a lower passivation layer (silicon nitride) that provides excellent moisture and air barrier properties, and an intermediate passivation layer (silicon oxide) that provides additional protection. This segmented approach ensures comprehensive protection against environmental factors while maintaining structural integrity.
3Ease of manufacture
If the IGZO layer is exposed to light, then the transistor can be easily manufactured, but photo leakage current increases significantly
Solution Approach 1:
The patent introduces an intermediate passivation layer (silicon oxide) between the IGZO channel layer and the upper resin layer. This intermediary layer acts as an additional barrier against light penetration while also providing protection against moisture and air, thereby preventing photo leakage current without complicating the manufacturing process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The structure effectively reduces photo leakage current and prevents degradation by providing multi-layer protection against light, moisture, and air, thereby maintaining low leakage current levels.
Implementation Method 1
The resin layer, being an opaque resin layer deposited over the source electrode, the second passivation layer, and the drain electrode, is used for forming a protection layer to prevent light, moisture, or dust from entering the structure
Implementation Method 2
The first passivation layer, being a first silicon compound layer deposited over the source electrode, the IGZO layer, and the drain electrode, possesses excellent insulating property. The second passivation layer, being a second silicon compound layer deposited over the first passivation layer, possesses excellent moisture-resistant and air-resistant properties
Data Source
AI summary
A metal oxide semiconductor structure, the structure including: a substrate; a gate electrode, deposited on the substrate; a gate insulation layer, deposited over the gate electrode and the substrate; an IGZO layer, deposited on the gate insulation layer and functioning as a channel; a source electrode, deposited on the gate insulation layer and being at one side of the IGZO layer; a drain electrode, deposited on the gate insulation layer and being at another side of the IGZO layer; a first passivation layer, deposited over the source electrode, the IGZO layer, and the drain electrode; a second passivation layer, deposited over the first passivation layer; and an opaque resin layer, deposited over the source electrode, the second passivation layer, and the drain electrode.