IGZO Thin Film Transistor Buffer Layer Annealing
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Solution Overview
Problem
Existing methods for manufacturing indium gallium zinc oxide (IGZO) thin film transistors require complex oxygen plasma treatment to ensure good contact between the source and drain, which is inefficient and cumbersome.
Innovation Solution
A manufacturing method involving the sequential deposition of a hydrogenated buffer layer and a shielding layer on a substrate, followed by annealing the IGZO layer to diffuse hydrogen and create doped conductor portions, allowing the source and drain to directly contact the IGZO layer without the need for complex plasma treatment.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If oxygen plasma treatment is applied to the interfaces to achieve good conductor property, then the contact between source/drain and IGZO is improved, but the manufacturing process complexity increases
Solution Approach 1:
The buffer layer is deposited beforehand to release hydrogen during annealing, which pre-dopes the IGZO layer at the source/drain contact regions. This preliminary hydrogen diffusion prepares the IGZO layer with conductor properties before the source and drain are formed, eliminating the need for subsequent oxygen plasma treatment and simplifying the manufacturing process.
Solution Approach 2:
The patent replaces the oxygen plasma treatment process (a complex surface modification technique) with a simpler annealing process. During annealing, the buffer layer releases hydrogen that diffuses into the IGZO layer, achieving conductor property through chemical doping rather than plasma surface treatment, thus substituting a complex mechanical/chemical process with a simpler thermal process.
2Reliability
If oxygen plasma treatment is used to ensure good contact, then conductor property is achieved, but production efficiency decreases
Solution Approach 1:
The patent combines the buffer layer deposition and IGZO layer doping into a single annealing step. The buffer layer serves dual purposes: protecting the substrate during manufacturing and releasing hydrogen to dope the IGZO layer during annealing. This merging of functions eliminates the need for separate oxygen plasma treatment steps, streamlining the process and improving production efficiency.
Solution Approach 2:
The buffer layer automatically releases hydrogen during the annealing process, which then diffuses into the IGZO layer to create conductor regions. This self-service mechanism eliminates the need for external plasma treatment equipment and processes, allowing the system to self-dope the IGZO layer through the buffer layer's hydrogen release, thereby improving productivity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method simplifies the manufacturing process, enhances production efficiency, and maintains the semiconductor properties of the IGZO layer while achieving good conductor contact between the source and drain.
Implementation Method 1
processing the IGZO layer by annealing, where the buffer layer's hydrogen is diffused into the second portion
Data Source
AI summary
The present disclosure provides a thin film transistor (TFT) and its manufacturing method. The method includes the following steps: sequentially depositing a buffer layer and a shielding layer on a substrate; forming an IGZO layer on and covering the shielding layer; processing the IGZO layer by annealing so that a portion of the IGZO layer is diffused by the buffer layer and has a conductor property; and forming a source and a drain so that the source and drain contact the portion of the IGZO layer. The present disclosure, through annealing the IGZO layer, the buffer layer makes portions of the IGZO layer contacting the source and the drain to have conductor property, thereby avoiding the prior art's complex process, simplifying the manufacturing of the IGZO TFT, and enhancing the production efficiency.