IGZO Thin Film Transistor With Hydrogen Buffer Layer
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Solution Overview
Problem
Amorphous silicon thin film transistors face issues with insufficient electron mobility and poor homogeneity, which are addressed by using oxide semiconductor materials like IGZO, but existing metallization methods such as plasma bombardment result in surface defects and poor contact resistance due to rough surfaces and recombination during thermal processes.
Innovation Solution
A thin film transistor (TFT) structure and manufacturing method involving a hydrogen-containing buffer layer and a blocking layer to control hydrogen entry, forming a conductor and semiconductor region within the oxide semiconductor layer, avoiding plasma bombardment and thermal recombination issues, with optional embodiments adjusting hydrogen content and using photoresist to simplify the process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If plasma bombardment is used for metallization of IGZO contact interface, then contact resistance is reduced, but surface defects increase and contact quality deteriorates due to rough surfaces and re-semiconducting effects
Solution Approach 1:
A hydrogen-containing buffer layer is introduced as an intermediary between the substrate and the oxide semiconductor layer. This buffer layer serves as a mediator to improve contact between the source/drain electrodes and the IGZO semiconductor, reducing contact resistance without requiring plasma bombardment that would damage the surface.
Solution Approach 2:
The invention replaces the mechanical/physical plasma bombardment process with a chemical approach using hydrogen-containing buffer layers. Instead of using high-energy plasma to metallize the contact interface, the patent uses hydrogen diffusion and thermal processing to achieve metallization, avoiding the surface damage caused by plasma impact.
2Ease of manufacture
If amorphous silicon is used for TFT, then manufacturing is simpler, but electron mobility is insufficient and homogeneity is poor
Solution Approach 1:
The invention uses a composite structure consisting of a hydrogen-containing buffer layer combined with an oxide semiconductor layer (IGZO). This composite material approach maintains the manufacturing simplicity of amorphous silicon processes while achieving the high electron mobility and homogeneity of crystalline oxide semiconductors, as the hydrogen-containing buffer layer facilitates better crystal growth and reduces defects in the IGZO layer.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method provides a stable and efficient metallization process with improved contact resistance and reduced surface defects, enhancing the performance of TFTs by maintaining semiconductor characteristics and preventing re-semiconducting effects.
Implementation Method 1
allowing hydrogen in the buffer layer to enter into a portion of the oxide semiconductor layer such that the oxide semiconductor layer is plasmon activated
Implementation Method 2
a blocking layer, formed between the buffer layer and the semiconductor region, and the blocking layer blocks hydrogen in the buffer layer from entering into the semiconductor region
Data Source
AI summary
A thin film transistor (TFT), a manufacturing method, an array substrate, a display panel, and a device is disclosed. The TFT includes a hydrogen-containing buffer layer located on a substrate; an oxide semiconductor layer located on the buffer layer, wherein the oxide semiconductor layer includes a conductor region and a semiconductor region; a source or drain located on the conductor region, and electrically connected to the conductor region; and a gate structure located on the semiconductor region.