IGZO Thin-Film Transistor Structure for High-Voltage Reliability
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Solution Overview
Problem
Conventional thin-film transistors (TFTs) are not suitable for high-voltage operations and tend to burn out when subjected to high voltage, leading to damage in electronic devices.
Innovation Solution
The design of a transistor with a semiconductor layer comprising multiple sub-layers, including a first sub-semiconductor layer of indium gallium zinc oxide (IGZO) and a second sub-semiconductor layer with an atomic ratio of indium, gallium, and zinc, which enhances high voltage resistance by optimizing the atomic percentages and thicknesses of these layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional thin-film transistors are used for high voltage operation, then device complexity is reduced, but reliability deteriorates due to transistor burnout
Solution Approach 1:
The semiconductor layer is divided into multiple sub-layers with different compositions and thicknesses. The first sub-layer has a first thickness and the second sub-layer has a second thickness greater than the first, creating a gradient structure that distributes electric field stress and prevents transistor burnout during high voltage operation
Solution Approach 2:
Different regions of the semiconductor layer are assigned different material compositions and thicknesses. The first sub-layer and second sub-layer have distinct indium, gallium, and zinc ratios, optimizing local electrical properties to enhance overall high voltage resistance while maintaining device functionality
2Reliability
If the atomic percentage of indium is increased in the semiconductor layer, then electrical conductivity is improved, but high voltage resistance deteriorates
Solution Approach 1:
The indium content is distributed non-uniformly across different sub-layers. The first sub-layer and second sub-layer have different indium atomic percentages, allowing optimal balance between conductivity and high voltage resistance in different regions of the semiconductor structure
Solution Approach 2:
The atomic percentages of indium, gallium, and zinc are systematically varied across the semiconductor layer thickness. By changing composition parameters from one sub-layer to another, the structure achieves both good electrical conductivity and enhanced high voltage resistance
Data Source
AI summary
An electronic device includes: a substrate; and a transistor disposed on the substrate, wherein the transistor includes: a gate electrode; a semiconductor layer at least partially overlapping the gate electrode, wherein the semiconductor layer includes a first sub-semiconductor layer and a second sub-semiconductor layer disposed on the first sub-semiconductor layer, and the second sub-semiconductor layer includes indium, gallium and zinc; a drain electrode electrically connected to the semiconductor layer; and a source electrode electrically connected to the semiconductor layer, wherein in the second sub-semiconductor layer, an atomic percentage of indium is less than an atomic percentage of gallium, and the atomic percentage of gallium is less than an atomic percentage of zinc.