IGZO Transistor Conductivity via Indium Oxide Particles
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Solution Overview
Problem
Oxide semiconductor transistors using IGZO exhibit low conductivity, resulting in low on-state current due to characteristics close to those of an insulator, limiting their performance in electronic devices.
Innovation Solution
Incorporating particles of indium oxide into the IGZO oxide semiconductor layer, which disperses throughout the layer, increasing conductivity by allowing carrier movement without interruption, and enhancing the transistor's on-state current.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If indium and oxygen form particles of indium oxide in IGZO, then conductivity increases due to carrier polarization, but the structure becomes more complex
Solution Approach 1:
The patent changes the physical and chemical parameters of the oxide semiconductor layer by incorporating InOx particles with different properties than the surrounding IGZO matrix. The particles have distinct composition, conductivity, and carrier concentration parameters, creating regions with optimized electrical characteristics that improve overall device conductivity
Solution Approach 2:
The patent creates a composite structure where InOx particles are embedded in the IGZO matrix. This composite approach allows the system to leverage the beneficial properties of both materials: the semiconductor characteristics of IGZO and the high conductivity of InOx particles, achieving improved performance without requiring complete structural redesign
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The resulting oxide semiconductor transistor with high conductivity achieves increased carrier mobility and on-state current, improving device performance.
Implementation Method 1
electric charge in IGZO is polarized. That is, in IGZO, the particle of indium oxide has characteristics close to those of an insulator, while a portion from which oxygen and indium are extracted to form the particle of indium oxide has higher conductivity than the other portions
Implementation Method 2
a crystal of indium oxide (In2O3) formed by bonding indium and oxygen contained in IGZO together exists as a particle
Data Source
AI summary
An oxide semiconductor transistor comprising an oxide semiconductor layer with high conductivity is provided. A semiconductor device including an oxide semiconductor layer comprising an oxide containing indium, gallium, and zinc (IGZO) and a particle of indium oxide; a gate electrode overlapping with a channel formation region in the oxide semiconductor layer with a gate insulating film interposed therebetween; and a source electrode and a drain electrode overlapping with a source region and a drain region in the oxide semiconductor layer. The semiconductor device may be a top-gate oxide semiconductor transistor or a bottom-gate oxide semiconductor transistor. The oxide semiconductor layer may be formed over or below the source electrode and the drain electrode.