IGZTO Thin-Film Transistor Stack for High-Resolution OLED Displays
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Solution Overview
Problem
Current display technologies face limitations in achieving high-resolution displays due to constraints in transistor design, particularly in the mobility and composition of semiconductor materials used in pixel circuits.
Innovation Solution
A display device is developed with a thin film transistor featuring a semiconductor pattern made of indium gallium zinc tin oxide, where the tin composition ratio is 10% or higher, and an insulating layer containing silicon oxide is used, formed via a PEALD process using a DIPAS precursor, enhancing mobility and reducing hydrogen concentration at the interface.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional semiconductor materials are used in pixel circuits, then device complexity is reduced, but saturation mobility is insufficient to achieve high-resolution displays
Solution Approach 1:
The patent changes the compositional parameters of the semiconductor material by incorporating tin oxide (SnO2) at ratios of 10% or more into the IGZO base material. This parameter change directly increases saturation mobility to 30 cm2/Vs or more, resolving the contradiction between maintaining simple device structure and achieving high mobility required for high-resolution displays.
Solution Approach 2:
The patent creates a composite semiconductor material by combining indium gallium zinc oxide (IGZO) with tin oxide (SnO2). This composite material structure achieves superior electrical characteristics with saturation mobility of 30 cm2/Vs or more while maintaining the thin-film transistor architecture, thus resolving the contradiction between material complexity and performance enhancement.
2Manufacturing precision
If insulating layer is formed close to semiconductor pattern, then interface control is improved, but hydrogen concentration increases reducing mobility
Solution Approach 1:
The patent changes the formation parameters of the insulating layer by using PEALD (Plasma-Enhanced Atomic Layer Deposition) process with DIPAS precursor. This parameter change achieves dual benefits: precise interface control for thin film uniformity and reduced hydrogen concentration in the insulating layer, thereby maintaining high mobility of 30 cm2/Vs or more despite the close interface configuration.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution achieves saturation mobility greater than 30 cm2/Vs, improving the electrical characteristics and enabling the production of high-resolution display panels with enhanced performance.
Implementation Method 1
the forming of the insulating layer uses a PEALD scheme using a DIPAS precursor
Implementation Method 2
the method may further include heat-treating the insulating layer after the semiconductor pattern and the insulating layer are formed
Data Source
AI summary
A display device is disclosed that includes a base substrate, an organic light emitting element disposed on the base substrate, an insulating layer disposed on the base substrate and containing silicon oxide, and a thin film transistor disposed on the base substrate and electrically connected to the organic light emitting element, wherein the thin film transistor includes a semiconductor pattern disposed on the base substrate and including a channel area in contact with the insulating layer, and a gate electrode overlapping the channel area on a plane, wherein the semiconductor pattern contains indium gallium zinc tin oxide.