III-N Diode-Transistor Integration for ESD Protection

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Solution Overview

Problem

III-N semiconductor devices, such as transistors, are susceptible to damage from electrostatic discharge (ESD) events during manufacturing and usage, requiring effective ESD protection to ensure reliability and functionality.

Innovation Solution

The integration of a diode and a III-N transistor on a shared substrate with a stack of III-N materials, including a polarization layer and an intervening III-N material layer, facilitates ESD protection by enhancing current conduction and reducing reverse leakage, while a dielectric spacer further minimizes reverse bias leakage.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a diode is connected to a transistor for ESD protection, then reliability is improved, but device complexity increases

Engineering Contradiction:

ImproveESD protectionVSAvoiddevice complexity

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The patent combines the ESD protection diode and the III-N transistor into a single integrated device structure, where both components share common layers and substrates. This merging approach provides ESD protection functionality while avoiding the complexity of separate discrete components and their interconnections.

Inventive Principle:

Principle #5Merging (Combining)

Solution Approach 2:

The III-N material layers serve multiple functions simultaneously: they provide the active transistor channel, form the diode junction for ESD protection, and enable both high-current conduction and low reverse leakage characteristics. This multi-functionality reduces overall device complexity by eliminating the need for separate protection components.

Inventive Principle:

Principle #6Universality (Multi-functionality)

2Power

If III-N materials are used for high-frequency and high-power applications, then power is improved, but susceptibility to ESD damage increases

Engineering Contradiction:

Improvehigh-powerVSAvoidESD damage

Core Design Contradiction:

PowerVSObject-affected harmful factors

Solution Approach 1:

The patent introduces a specifically designed diode structure as an intermediary protection mechanism that safely dissipates ESD energy before it can damage the high-power III-N transistor. The diode acts as a mediator that protects the vulnerable transistor gate while allowing the device to maintain its high-power capabilities.

Inventive Principle:

Principle #24Intermediary (Mediator)

Solution Approach 2:

The ESD protection diode is integrated into the device structure beforehand, providing pre-established protection against electrostatic discharge. This prior cushioning approach ensures that when ESD events occur during manufacturing or usage, the protection is already in place to prevent damage to the high-power transistor.

Inventive Principle:

Principle #11Beforehand cushioning (Prior cushioning)

3Reliability

If current conduction is enhanced for ESD protection, then reliability is improved, but reverse leakage increases

Engineering Contradiction:

ImproveESD protectionVSAvoidreverse leakage

Core Design Contradiction:

ReliabilityVSLoss of energy

Solution Approach 1:

The patent employs different III-N material compositions and structures in different regions: the diode junction is designed with specific material properties to enhance forward current conduction for ESD protection, while the transistor channel region is optimized to minimize reverse leakage. This local quality differentiation resolves the contradiction between protection capability and energy loss.

Inventive Principle:

Principle #3Local quality

Solution Approach 2:

The patent utilizes changes in material parameters (composition, thickness, doping) of the III-N layers to optimize both forward conduction and reverse leakage characteristics. By adjusting these parameters in the diode and transistor regions, the device achieves high reliability for ESD protection while maintaining low reverse leakage energy loss.

Inventive Principle:

Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration provides robust ESD protection, ensuring high on-current and low reverse leakage, thereby safeguarding the semiconductor device from ESD-induced damage and maintaining device performance.

Implementation Method 1

a polarization layer and an intervening III-N material layer, facilitates ESD protection by enhancing current conduction

Methodology Applied

Scientific EffectPolarization: Polarisation

Implementation Method 2

enhancing current conduction and reducing reverse leakage

Methodology Applied

Scientific EffectElectrical conduction: Conduction (electrical)

Implementation Method 3

a dielectric spacer further minimizes reverse bias leakage

Methodology Applied

Scientific EffectDielectric insulation: Dielectric

Data Source

PatentUS11552075B2Group III-nitride (III-N) devices and methods of fabrication

Publication Date: 2023.01.10 INTEL CORP

AI summary

A device includes a diode that includes a first group III-nitride (III-N) material and a transistor adjacent to the diode, where the transistor includes the first III-N material. The diode includes a second III-N material, a third III-N material between the first III-N material and the second III-N material, a first terminal including a metal in contact with the third III-N material, a second terminal coupled to the first terminal through the first group III-N material. The device further includes a transistor structure, adjacent to the diode structure. The transistor structure includes the first, second, and third III-N materials, a source and drain, a gate electrode and a gate dielectric between the gate electrode and each of the first, second and third III-N materials.