III-N Guard Ring Trenches to Arrest Singulation Cracks
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Solution Overview
Problem
The challenge in semiconductor manufacturing is the propagation of cracks during singulation of III-N semiconductor devices, which can damage IC chips and reduce yield, particularly when using laser or mechanical dicing methods.
Innovation Solution
The implementation of guard ring structures with discontinuities, such as trenches, in the III-N layer and semiconductor substrate to arrest crack propagation, which are integrated into the fabrication process at various stages, including before or after transistor formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If laser or mechanical dicing methods are used for singulation, then manufacturing efficiency is improved, but crack propagation occurs damaging IC chips and reducing yield
Solution Approach 1:
The III-N layer is segmented by forming discontinuities (trenches) that extend through the layer and into the substrate. These segmented regions create barriers that divide potential crack paths, preventing cracks from propagating continuously across the device region during laser or mechanical dicing operations
Solution Approach 2:
The discontinuities in the III-N layer act as intermediary structures between the scribe lane and the device region. These intermediaries absorb and deflect crack energy, serving as a protective buffer that prevents direct crack transmission from the scribe lane into the active device areas during singulation
2Reliability
If guard ring structures with discontinuities are formed, then crack propagation is arrested improving yield, but device complexity increases
Solution Approach 1:
The guard ring structure is merged with the III-N layer formation process itself. The discontinuities are integrated into the existing III-N layer rather than being added as separate components, combining the protective function with the active device layer to reduce overall structural complexity
Solution Approach 2:
The III-N layer serves multiple functions: it acts as both the active semiconductor layer for device operation and as the guard ring structure for crack protection. The discontinuities provide dual functionality by serving as both structural features within the III-N layer and as crack-arresting barriers, eliminating the need for separate protective structures
Data Source
AI summary
Semiconductor devices with guard ring structures are described. In some examples, a semiconductor device includes a semiconductor substrate, a III-N layer over the semiconductor substrate. The III-N layer extends past a device region of the semiconductor substrate. The semiconductor device further includes a guard ring surrounding the device region. The guard ring includes a discontinuity formed through the III-N layer and extending into the semiconductor substrate.