III-Nitride Transistor Rectifier Package for High-Speed Power Conversion

Resolve Bottlenecks,
Find Innovative SolutionsGenerate Solutions

Solution Overview

Problem

Conventional power switching circuits, such as boost converters, face challenges in achieving high efficiency and suppressing electromagnetic interference (EMI) as switching frequencies and speeds increase, due to limitations in silicon-based devices and existing circuit architectures.

Innovation Solution

The integration of III-Nitride (III-N) transistors and rectifying devices within a single package, optimized for high-speed switching with reduced parasitics, enables efficient power conversion with minimal EMI, utilizing III-N transistors capable of switching speeds exceeding 150 Volts/nanosecond and III-N diodes to maintain high efficiency and reduce noise.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If silicon-based devices are used in power switching circuits, then manufacturing cost is reduced, but switching speed is limited and EMI increases

Engineering Contradiction:

Improvemanufacturing costVSAvoidswitching speed

Core Design Contradiction:

Ease of manufactureVSSpeed

Solution Approach 1:

The patent changes the material parameter from silicon to III-Nitride, which fundamentally alters the switching speed capability and EMI characteristics while maintaining manufacturing feasibility through established semiconductor fabrication processes

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The patent employs composite material structure by integrating III-Nitride transistor and rectifying device in a single package, combining the advantages of high-speed switching with cost-effective packaging and assembly techniques

Inventive Principle:

Principle #40Composite materials

2Volume of moving object

If switching frequency is increased for compact power supplies, then power supply size is reduced, but EMI and electrical noise increase

Engineering Contradiction:

Improvepower supply sizeVSAvoidEMI and electrical noise

Core Design Contradiction:

Volume of moving objectVSObject-generated harmful factors

Solution Approach 1:

The patent merges the transistor and rectifying device into a single integrated package, reducing the overall circuit footprint and allowing higher switching frequencies in compact designs while the III-Nitride material inherently suppresses EMI generation

Inventive Principle:

Principle #5Merging (Combining)

Solution Approach 2:

The patent changes the device material to III-Nitride, which enables operation at higher switching frequencies with reduced EMI and electrical noise compared to conventional silicon devices

Inventive Principle:

Principle #35Parameter changes

3Loss of energy

If switching speed is increased to improve efficiency, then power conversion efficiency is improved, but EMI and electrical noise increase

Engineering Contradiction:

Improvepower conversion efficiencyVSAvoidEMI and electrical noise

Core Design Contradiction:

Loss of energyVSObject-generated harmful factors

Solution Approach 1:

The patent changes the material parameter to III-Nitride, which enables high switching speeds for improved efficiency while the material's inherent properties suppress EMI and electrical noise generation

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The patent converts the potential harm of high-speed switching (which generates EMI) into a benefit by using III-Nitride material that enables high switching speeds while inherently suppressing EMI and electrical noise

Inventive Principle:

Principle #22Blessing in disguise (Convert harm into benefit)

Data Source

PatentUS9401341B2Electronic devices and components for high efficiency power circuits

Publication Date: 2016.07.26 TRANSPHORM TECHNOLOGY INC

AI summary

An electronic component includes a III-N transistor and a III-N rectifying device both encased in a single package. A gate electrode of the III-N transistor is electrically connected to a first lead of the single package or to a conductive structural portion of the single package, a drain electrode of the III-N transistor is electrically connected to a second lead of the single package and to a first electrode of the III-N rectifying device, and a second electrode of the III-N rectifying device is electrically connected to a third lead of the single package.