III-Nitride Diode Access Region Layout for Electric Field Shaping
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Solution Overview
Problem
Conventional III-nitride semiconductor diodes have uniform electron density between the anode and cathode electrodes, limiting their ability to shape the electric field effectively, which restricts their high-current, high-voltage, and high-frequency performance.
Innovation Solution
The introduction of electron density reduction regions (EDR regions) between the anode and cathode electrodes, created through trenches, implantation, or a cap layer, reduces free electron density non-uniformly, allowing for localized control of the electric field and carrier density.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If uniform electron density is maintained between anode and cathode electrodes, then device structure is simple and manufacturing is easier, but electric field shaping capability is limited and high-voltage performance is restricted
Solution Approach 1:
The patent introduces electron density reduction regions with specific dimensions (length La and width Wa) that create localized non-uniform electron density distribution in the access region. This local modification allows electric field shaping capability to be concentrated where needed, improving high-voltage performance without requiring complete restructuring of the entire device.
Solution Approach 2:
The access region is divided into multiple electron density reduction regions separated by a distance Wb, creating a segmented structure. This segmentation allows independent control of electron density at different locations, enabling effective electric field shaping while maintaining overall device functionality and relatively simple manufacturing processes.
2Reliability
If electron density reduction regions are introduced to shape electric field, then reverse leakage current is reduced and voltage handling is improved, but device structure becomes more complex
Solution Approach 1:
The patent modifies the electron density parameter in the access region by introducing EDR regions with controlled dimensions (La, Wa, and separation distance Wb). This parameter change directly reduces reverse leakage current and improves voltage handling capability, as the non-uniform electron density distribution shapes the electric field to prevent breakdown and reduce leakage.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the maximum voltage and reliability of the diode by reducing reverse leakage current and enabling better control over the electric field distribution, thereby improving high-power and high-frequency performance.
Implementation Method 1
a barrier layer, wherein electrons are formed at an interface between the channel layer and the barrier layer
Implementation Method 2
an anode electrode in Schottky contact with the barrier layer
Implementation Method 3
a cathode electrode disposed in an ohmic recess in contact with the barrier layer
Data Source
AI summary
This disclosure describes the structure and technology to modify the free electron density between the anode electrode and cathode electrode of III-nitride semiconductor diodes. Electron density reduction regions (EDR regions) are disposed between the anode and cathode electrodes of the diode structure. In certain embodiments, the EDR regions are created using trenches. In other embodiments, the EDR regions are created by implanting the regions with a species that reduces the free electrons in the channel layer. In another embodiment, the EDR regions are created by forming a cap layer over the barrier layer, wherein the cap layer reduces the free electrons in the channel beneath the cap layer. In another embodiment, a cap layer may be formed in the EDR regions, and doped regions may be created outside of the EDR regions, wherein the impurities act as electron donors.