III-Nitride Doping During Growth to Prevent Nitrogen Loss

The patent applies preliminary action by performing implantation during the growth process rather than after complete growth and annealing. The dopant is introduced in advance during the formation of the III-nitride layer, eliminating the need for subsequent high-temperature annealing that would cause nitrogen loss. This resolves the contradiction by achieving dopant incorporation without the harmful high-temperature treatment.

The patent changes the temperature parameter by conducting implantation at lower temperatures during growth rather than performing high-temperature annealing afterward. By modifying the thermal conditions and timing of dopant introduction, the process achieves effective doping while avoiding nitrogen decomposition, thus resolving the contradiction between dopant activation and nitrogen retention.

The patent applies segmentation by dividing the reactor chamber into distinct pressure zones - a vacuum region for precise ion implantation and a higher pressure region for III-nitride growth. This spatial segmentation allows both vacuum-based precise implantation and gas-pressure-based growth to occur simultaneously in different areas of the same chamber, resolving the contradiction between implantation precision and growth conditions.

The patent uses differential pumping as an intermediary mechanism to bridge the vacuum environment required for implantation and the gas environment required for growth. The differential pumping system creates and maintains different pressure conditions in different regions of the chamber, enabling both processes to coexist without direct conflict, thus resolving the contradiction between vacuum precision and gas pressure growth.

The patent applies continuity of useful action by performing repeated, low-energy implantation cycles during the continuous growth process. Instead of a single high-energy implantation, the dopant is introduced multiple times at lower energies as the layer grows, accumulating the desired total dopant concentration and depth profile. This continuous, incremental approach achieves both precise distribution control and adequate implantation depth.

The patent uses periodic action by implementing intermittent implantation pulses during the growth process. Low-energy implantation is performed in periodic cycles at specific growth stages, allowing precise control of dopant distribution while achieving cumulative depth penetration through multiple passes, thus resolving the contradiction between distribution precision and implantation depth.