III-Nitride HEMT with Segmented Silicon Substrate for High Voltage
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Solution Overview
Problem
Conventional III-nitride semiconductor devices face challenges in maintaining optimal charge carrier constraint within the conduction zone under high applied voltages, leading to potential device failure and inability to support high voltage applications effectively.
Innovation Solution
A high voltage durability III-nitride semiconductor device is designed with a support substrate comprising a first silicon body, an insulator body, and a second silicon body with a conductivity type opposite to the majority charge carrier conductivity type of the III-nitride semiconductor body, enhancing resistance to breakdown and enabling monolithic vertical integration with silicon devices.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional III-nitride semiconductor device fabrication approaches are used, then device fabrication is simplified, but charge carrier constraint within the conduction zone deteriorates under high voltage
Solution Approach 1:
The support substrate is segmented into multiple silicon bodies (first silicon body and second silicon body) separated by an insulator body. This segmentation creates distinct functional regions: the first silicon body provides mechanical support and allows silicon device fabrication, while the second silicon body serves as the substrate for III-nitride devices with optimized charge carrier constraint properties.
Solution Approach 2:
An insulator body is introduced as an intermediary element between the first silicon body and the second silicon body. This insulator body electrically isolates the two silicon bodies while maintaining mechanical integrity of the support substrate, enabling independent optimization of each silicon body's function without electrical interference.
2Power
If high applied voltage is applied to achieve high power handling capability, then power handling capability is improved, but device breakdown through silicon substrate occurs
Solution Approach 1:
The conductivity type of the second silicon body is changed to be opposite to the majority charge carrier conductivity type of the III-nitride semiconductor body. This parameter change creates a blocking effect that prevents charge carriers from dispersing into the silicon substrate under high voltage, thereby preventing device breakdown while maintaining high power handling capability.
Solution Approach 2:
The second silicon body with opposite conductivity type is designed in advance to counteract the tendency of charge carriers to disperse into the silicon substrate under high voltage stress. This preliminary anti-action prevents the harmful effect of charge carrier dispersion before it can cause device breakdown.
3Reliability
If III-nitride semiconductor devices are designed for high voltage operation, then voltage durability is improved, but integration with silicon devices is limited
Solution Approach 1:
The support substrate is divided into two separate silicon bodies that can independently support different device types. The first silicon body is optimized for silicon device integration, while the second silicon body is optimized for III-nitride high voltage devices, enabling monolithic vertical integration of heterogeneous device architectures.
Solution Approach 2:
The support substrate structure achieves multi-functionality by supporting both silicon devices and III-nitride semiconductor devices on the same substrate. This universal platform enables concurrent operation of power semiconductor devices with different material systems and voltage ratings.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution achieves high voltage durability exceeding 800 volts, preventing device breakdown and supporting the integration of III-nitride and silicon devices, allowing for reliable operation in high voltage applications and concurrent operation of power semiconductor devices.
Implementation Method 1
an insulator body interposed between the first and second silicon bodies
Implementation Method 2
a second silicon body with a conductivity type opposite to the majority charge carrier conductivity type of the III-nitride semiconductor body
Data Source
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AI summary
A high voltage durability III-nitride semiconductor device comprises a support substrate (10) including a first silicon body (14), an insulator body (18) over the first silicon body (14), and a second silicon body (16) over the insulator body (18). The high voltage durability III-nitride semiconductor device further comprises a III-nitride semiconductor body (12) characterized by a majority charge carrier conductivity type, formed over the second silicon body (16). The second silicon body (16) has a conductivity type opposite the majority charge carrier conductivity type. In one embodiment, the high voltage durability III-nitride semiconductor device is a high electron mobility transistor (HEMT) comprising a support substrate (10) including a <100> silicon layer (14), an insulator layer (18) over the <100> silicon layer (14), and a P type conductivity <111> silicon layer (16) over the insulator layer. The high voltage durability HEMT also comprises a III-nitride semiconductor body (12) formed over the P type conductivity <111> silicon layer (16), the III-nitride semiconductor body (12) forming a heterojunction of the HEMT.