III-Nitride Interface State Reduction via Remote Plasma and LPCVD
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Solution Overview
Problem
The high interface state between III-Nitride material and its passivation layer or gate dielectric restricts the application of III-Nitride electronic devices, primarily due to interface oxidation during the technical process, which hinders the industrialization of III-Nitride power electronics.
Innovation Solution
A method involving a remote plasma surface process on the III-Nitride layer, followed by transferring the substrate through an oxygen-free system to a deposition cavity for low-pressure chemical vapor deposition (LPCVD), which removes surface oxidation and impurities, reducing the interface state and preventing re-oxidation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional deposition techniques are used on III-Nitride layers, then the manufacturing process is simple, but the interface state between the III-Nitride layer and the deposited layer is high due to surface oxidation
Solution Approach 1:
A remote plasma surface process is performed on the III-Nitride layer before deposition to remove surface oxidation and activate the surface. This preliminary treatment creates a clean, reactive surface that reduces interface states and improves the quality of the subsequently deposited dielectric layer.
Solution Approach 2:
An oxygen-free transferring system is used to transport the substrate between the plasma processing chamber and the deposition chamber. This inert environment prevents re-oxidation of the III-Nitride surface during transfer, maintaining the low interface state achieved by the plasma treatment.
2Reliability
If the III-Nitride surface is exposed to air during processing, then the manufacturing process is easier, but the surface re-oxidizes leading to high interface state
Solution Approach 1:
An oxygen-free transferring system operates in a vacuum or inert gas atmosphere to prevent re-oxidation of the III-Nitride surface during substrate transport between processing chambers. This maintains the surface quality while enabling practical manufacturing through automated transfer.
Solution Approach 2:
The substrate is transferred continuously through an oxygen-free environment from the plasma treatment chamber directly to the deposition chamber without exposure to air. This continuous protective action prevents re-oxidation while maintaining manufacturing efficiency through integrated processing.
3Reliability
If high energy plasma is used for surface treatment, then surface cleaning is effective, but the III-Nitride layer suffers impairment
Solution Approach 1:
A remote plasma source is used as an intermediary that generates reactive species in the gas phase, which then gently treat the III-Nitride surface without direct plasma bombardment. This indirect approach effectively removes surface oxidation while minimizing damage to the underlying layer.
Solution Approach 2:
The plasma process parameters are optimized to use lower power and controlled gas composition (e.g., NH3, N2, or H2-based plasmas) that provide sufficient surface cleaning and activation while avoiding excessive energy input that would damage the III-Nitride layer structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach significantly decreases the interface state between the III-Nitride layer and the deposited nitride dielectric, enabling the growth of high-quality layers and improving the reliability of III-Nitride electronic devices by integrating a low impairment remote plasma surface process with LPCVD.
Implementation Method 1
performing a remote plasma surface process on III-Nitride layer on a substrate; The plasma used in the plasma surface process belongs to soft plasma which is of low energy
Implementation Method 2
depositing on the processed substrate in the deposition cavity; A nitride dielectric layer may be deposited on the substrate with the LPCVD
Data Source
AI summary
A method for manufacturing a low interface state device includes performing a remote plasma surface process on a III-Nitride layer on a substrate; transferring the processed substrate to a deposition cavity via an oxygen-free transferring system; and depositing on the processed substrate in the deposition cavity. The deposition may be low pressure chemical vapor deposition (LPCVD). The interface state between a surface dielectric and III-Nitride material may be significantly decreased by integrating a low impairment remote plasma surface process and LPCVD.