III-V Source/Drain Contact Structure With Metal Silicide Patterns
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing semiconductor devices with III-V compound semiconductor layers face challenges in reducing contact resistance between the source/drain structure and the semiconductor layer, which limits the operational performance of the devices.
Innovation Solution
The semiconductor device incorporates a source/drain structure formed with metal silicide patterns and a metal layer disposed on the metal silicide patterns, with a portion of the metal layer located between adjacent metal silicide patterns. This configuration reduces contact resistance and enhances operational performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional source/drain structure is used with III-V compound semiconductor layer, then the device structure is simple, but the contact resistance between source/drain structure and semiconductor layer is high
Solution Approach 1:
The source/drain structure employs a composite configuration combining metal silicide patterns with a metal layer, creating a hybrid material system that leverages the low resistivity of metals and the adhesion properties of metal silicides to achieve reduced contact resistance with the III-V compound semiconductor layer
Solution Approach 2:
The source/drain structure is segmented into discrete metal silicide patterns rather than a continuous layer, with the metal layer filling the spaces between them. This segmentation allows optimized electrical contact while reducing overall material usage and enabling better control over contact resistance characteristics
2Reliability
If the contact resistance is reduced by modifying source/drain structure, then the operational performance is enhanced, but the manufacturing process complexity increases
Solution Approach 1:
The metal silicide patterns are formed first through selective deposition and silicidation processes, creating predefined contact regions on the III-V compound semiconductor layer. Subsequently, the metal layer is deposited to fill the spaces between these pre-formed patterns, ensuring optimized contact resistance is achieved before final device assembly
Data Source
AI summary
A semiconductor device includes a III-V compound semiconductor layer and a source/drain structure. The source/drain structure is disposed on the III-V compound semiconductor layer. The source/drain structure includes a metal layer and metal silicide patterns. The metal layer is disposed on the metal silicide patterns, and a portion of the metal layer is disposed between the metal silicide patterns adjacent to each other.