III-V Semiconductor Gate Threshold Control via Passivation
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Solution Overview
Problem
Existing semiconductor devices with III-V material layers face challenges in achieving distinct activation ratios for different gates, which affects the threshold voltages of transistors, limiting design flexibility and increasing manufacturing complexity.
Innovation Solution
A semiconductor device with a III-V material layer and two gates, where the first and second gates have different activation ratios due to distinct passivation layers made of different materials, allowing for independent control of threshold voltages without requiring additional implantation techniques.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If the same passivation layer material is used for both gates, then the manufacturing process is simplified, but the threshold voltages of transistors cannot be independently controlled
Solution Approach 1:
The patent applies local quality by using different passivation layer materials (first passivation layer material for first gate, second passivation layer material for second gate) to create localized differences in element activation ratios. This enables independent threshold voltage control for each transistor while maintaining a unified manufacturing process flow, resolving the contradiction between manufacturing simplicity and design flexibility.
Solution Approach 2:
The patent changes the material parameter of the passivation layers to achieve different element activation ratios in different gates. By selecting passivation layer materials with different properties, the invention controls the threshold voltages of transistors independently without requiring additional implantation techniques, thus maintaining manufacturing simplicity while achieving voltage control flexibility.
2Adaptability or versatility
If additional implantation techniques are used to achieve different threshold voltages, then threshold voltage control is achieved, but manufacturing complexity increases
Solution Approach 1:
The patent changes the material parameter of passivation layers instead of using additional implantation techniques. By selecting passivation layer materials with different properties, the invention achieves different element activation ratios and threshold voltages through material selection alone, avoiding the need for complex additional processing steps.
Solution Approach 2:
The patent extracts the threshold voltage control function from the implantation process and transfers it to the passivation layer material selection. This removes the need for additional implantation techniques while maintaining the ability to independently control threshold voltages, thereby reducing manufacturing complexity.
3Adaptability or versatility
If different passivation layer materials are used, then independent threshold voltage control is achieved, but manufacturing precision requirements increase
Solution Approach 1:
The patent applies local quality by assigning different passivation layer materials to different gates based on their specific threshold voltage requirements. This localized material differentiation enables independent control of each transistor's threshold voltage while using standard deposition techniques, managing precision requirements through systematic material selection rather than extreme process control.
Data Source
AI summary
The present disclosure provides a semiconductor device and a fabrication method thereof. The semiconductor device includes a III-V material layer, a first gate, a second gate, and a first passivation layer. The first gate and the second gate are on the III-V material layer. The first passivation layer is on the first gate. A first activation ratio of an element in the first gate is different from a second activation ratio of the element in the second gate.