III-V Integrated Circuit with Light Irradiation for Oscillation Control

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Solution Overview

Problem

High-frequency electronic components and integrated circuits using compound semiconductors suffer from slow transient responses, long settling times, and unwanted low-frequency oscillations, which hinder their performance.

Innovation Solution

Incorporating a radiation-coupled emitting device, such as a LED, that emits specific wavelengths of light to irradiate the integrated circuit, thereby reducing susceptibility to large time-constant effects like low-frequency oscillations by attenuating them.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Duration of action of moving object

If compound semiconductors are used in high-frequency integrated circuits, then the circuits can generate effects with large time-constants, but slow transient response and long settling times occur

Engineering Contradiction:
Improvetime-constantVSAvoidtransient response
Core Design Contradiction:
Duration of action of moving objectVSSpeed

Solution Approach 1:

The patent applies parameter changes by irradiating the compound semiconductor with light at specific wavelengths (400-1100 nm) to modify the carrier concentration and reduce the time-constant of the semiconductor material. This light irradiation changes the electrical parameters of the compound semiconductor, enabling faster transient response while maintaining the ability to generate large time-constant effects when needed.

Inventive Principle:
Principle #35Parameter changes

2Duration of action of moving object

If compound semiconductors are used in high-frequency integrated circuits, then large time-constant effects can be generated, but low-frequency oscillations occur

Engineering Contradiction:
Improvetime-constantVSAvoidlow-frequency oscillations
Core Design Contradiction:
Duration of action of moving objectVSObject-generated harmful factors

Solution Approach 1:

The patent converts the harmful low-frequency oscillations into a beneficial effect by using light irradiation to control the carrier concentration in the compound semiconductor. The same light irradiation that was intended to speed up transient response also suppresses the unwanted low-frequency oscillations, turning a harmful phenomenon into a controllable and beneficial one.

Inventive Principle:
Principle #22Blessing in disguise (Convert harm into benefit)

3Duration of action of moving object

If compound semiconductors are used in high-frequency integrated circuits, then large time-constant effects can be generated, but long settling times occur

Engineering Contradiction:
Improvetime-constantVSAvoidsettling time
Core Design Contradiction:
Duration of action of moving objectVSLoss of time

Solution Approach 1:

The patent uses light irradiation at wavelengths between 400-1100 nm to change the carrier concentration parameter in the compound semiconductor material. This parameter change reduces the time-constant and enables the circuit to settle faster, reducing settling time from milliseconds to microseconds or less, while still maintaining the ability to generate large time-constant effects when the light is not irradiating.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The irradiation significantly reduces or eliminates low-frequency oscillations, improving the performance of high-frequency electronic components and integrated circuits by up to 70% compared to non-illuminated circuits.

Implementation Method 1

an emitting device for irradiating the integrated circuit

Methodology Applied
Scientific EffectLight Emitting Diode: Light Emitting Diode

Implementation Method 2

irradiating the integrated circuit with the emitting device

Methodology Applied
Scientific EffectPhotoconductivity: Photoconductivity

Data Source

PatentUS10867981B2High frequency integrated circuit and emitting device for irradiating the integrated circuit
Publication Date: 2020.12.15 ADVANTEST CORP
  • US10867981B2 patent drawing
  • US10867981B2 patent drawing
  • US10867981B2 patent drawing

AI summary

What is described is a high-frequency integrated circuit provided on a III-V compound semiconductor, wherein an emitting device is radiation-coupled with the integrated circuit such that the emitting device irradiates the integrated circuit, and wherein the integrated circuit has at least one of an oscillator, a mixer, a phase shifter, a frequency divider or an amplifier.