III-V Epitaxial Layer Transfer Using Selective Sacrificial Etching
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current methods for manufacturing optoelectronic devices using III-V compounds on silicon substrates are costly due to the limited number of transferable layers and high material costs.
Innovation Solution
An epitaxial growth method involving the formation of first and second semiconductor layers on a support, separation of stacks using selective etching, and transfer of these stacks onto a second support, allowing reuse of the first support for further growth, with the use of ternary or quaternary compounds and selective etching to optimize layer separation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a block of III-V compound is used for epitaxial growth, then optoelectronic components can be formed, but the number of transferable layers is limited and cost increases
Solution Approach 1:
The invention segments the manufacturing process by introducing a sacrificial layer between the support and the III-V compound layers. This allows the support to be separated and reused, enabling multiple layers to be transferred from the same support, thereby increasing productivity without proportionally increasing costs.
Solution Approach 2:
The sacrificial layer is deliberately discarded through selective etching to enable recovery and reuse of the support substrate. This recovery process allows the same support to be used multiple times for growing and transferring III-V compound layers, reducing material costs and increasing the number of transferable layers.
2Productivity
If selective etching is used to separate stacks, then support reuse is enabled, but process complexity increases
Solution Approach 1:
The sacrificial layer acts as an intermediary element that enables support reuse. By being selectively removable through etching, it mediates between the support and the III-V compound layers, allowing clean separation without damaging the delicate optoelectronic structures. This intermediary approach simplifies the overall process compared to direct separation methods.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method reduces costs by enabling efficient reuse of the first support and allows for the production of optoelectronic devices with improved yield and reduced material waste, while maintaining lattice parameter compatibility.
Implementation Method 1
the epitaxial growth, on each first layer, of first layers of a first semiconductor material covering a first support and spaced apart from one another
Implementation Method 2
the separation of each stack from the first layer by etching of the second layer by an etching selective both over the first and third materials
Data Source
AI summary
An optoelectronic device is manufactured by an epitaxial growth, on each first layer of many first layers spaced apart from each other on a first support, wherein the first is made of a first semiconductor material, of a second layer made of a second semiconductor material. A further epitaxial growth is made on each second layer of a stack of semiconductor layers. Each stack includes a third layer made of a third semiconductor material in physical contact with the second layer. Each stack is then separated from the first layer by removing the second layer using an etching that is selective simultaneously over both the first and third semiconductor materials. Each stack is then transferred onto a second support. Each of the first and third semiconductor materials is one of a III-V compound or a II-VI compound.