III-V Optical Interconnects for CMOS Data Transmission
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Solution Overview
Problem
The increasing size of semiconductor devices leads to higher resistance in interconnects, limiting further performance enhancements due to slower data signal transmission speeds across physical electrical communication structures.
Innovation Solution
The implementation of an optical interconnect using III-V light emission and detection devices with epitaxial material layers directly contacting the semiconductor substrate, replacing traditional electrical communication methods to enhance data transmission speed.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the dimensions of semiconductor devices are shrunk to improve device performance, then device performance is improved, but the resistance of interconnects increases
Solution Approach 1:
The patent replaces traditional electrical interconnects with optical interconnects using light emission and detection devices. This substitution uses optical fields instead of electrical fields to transmit data signals, eliminating the resistance problem that plagues scaled electrical interconnects while maintaining compatibility with scaled semiconductor devices
2Length of moving object
If the interconnect size is decreased to support device scaling, then device scaling is enabled, but the resistance of interconnects increases
Solution Approach 1:
The patent substitutes electrical interconnect transmission with optical interconnect transmission. The optical interconnect uses light to carry data signals between semiconductor devices, bypassing the resistance issue that occurs when electrical interconnect dimensions are reduced for device scaling
3Productivity
If switching speeds are increased to improve performance, then device performance is improved, but the speed of data signal transmission over interconnects becomes the limiting factor
Solution Approach 1:
The patent replaces electrical signal transmission with optical signal transmission for data communication between semiconductor devices. This enables data signal transmission speeds to keep pace with increased switching speeds, removing the bottleneck that limits further performance enhancements
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution significantly increases data transmission speed by using optical interconnects, outperforming traditional electrical communication methods and overcoming the limitations of increasing resistance in smaller semiconductor device interconnects.
Implementation Method 1
III-V epitaxial semiconductor material formed using lateral overgrowth
Data Source
AI summary
An electrical device that includes a first semiconductor device positioned on a first portion of a substrate and a second semiconductor device positioned on a third portion of the substrate, wherein the first and third portions of the substrate are separated by a second portion of the substrate. An interlevel dielectric layer is present on the first, second and third portions of the substrate. The interlevel dielectric layer is present over the first and second semiconductor devices. An optical interconnect is positioned over the second portion of the semiconductor substrate. At least one material layer of the optical interconnect includes an epitaxial material that is in direct contact with a seed surface within the second portion of the substrate through a via extending through the least one interlevel dielectric layer.