Halogen Acid and Mercapto Compound Cleaning Solution for III-V Oxide Removal
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Solution Overview
Problem
In semiconductor production, there is a challenge in precisely removing oxide films of Group III-V elements without corroding the underlying materials, especially as feature sizes decrease, and in preventing oxidation of the surface post-etching or film removal, which affects electrical properties.
Innovation Solution
A liquid composition containing 0.05-20 wt.% of a halogen acid and 0.01-10 wt.% of a mercapto compound, specifically designed to dissolve and prevent the oxidation of Group III-V element oxides, is used for treating semiconductor substrates to remove oxides and prevent metal elution.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional cleaning solutions are used to remove oxide films of Group III-V elements, then oxide removal is achieved, but corrosion of underlying materials occurs
Solution Approach 1:
The patent modifies the chemical composition parameters of the cleaning solution by incorporating specific concentrations of halogen acid (0.05-20 wt.%) and mercapto compound (0.01-10 wt.%), which changes the selective etching characteristics to remove oxides while preserving underlying materials
Solution Approach 2:
The invention uses a composite cleaning solution containing multiple components including halogen acid, mercapto compound, and other additives that work synergistically to achieve selective oxide removal without corroding the underlying semiconductor materials
2Ease of operation
If the surface is exposed during semiconductor production, then processing is enabled, but oxidation of the surface occurs
Solution Approach 1:
The cleaning solution is applied immediately after etching or film removal while the surface is still exposed, performing oxide removal and oxidation prevention in sequence before oxidation can significantly affect the underlying materials
Solution Approach 2:
The mercapto compound acts as an intermediary that forms a protective layer on the exposed surface, preventing direct oxidation while allowing the halogen acid to remove existing oxide films
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively removes Group III-V element oxides with high selectivity and prevents subsequent oxidation, maintaining a clean surface and improving the quality of semiconductor substrates by controlling the acid and mercapto compound ratio for optimal performance and recyclability.
Implementation Method 1
A liquid composition containing 0.05-20 wt.% of a halogen acid and 0.01-10 wt.% of a mercapto compound, specifically designed to dissolve and prevent the oxidation of Group III-V element oxides
Implementation Method 2
0.01-10 wt.% of a mercapto compound... prevents subsequent oxidation, maintaining a clean surface and improving the quality of semiconductor substrates by controlling the acid and mercapto compound ratio
Data Source
AI summary
Provided are a removal liquid for removing an oxide of a Group III-V element, an oxidation prevention liquid for preventing the oxidation of an oxide of a Group III-V element or a treatment liquid for treating an oxide of a Group III-V element, each liquid including an acid and a mercapto compound; and a method using each of the same liquids. Further provided are a treatment liquid for treating a semiconductor substrate, including an acid and a mercapto compound, and a method for producing a semiconductor substrate product using the same.