III-V Silicon Optical Grating Structure for Low Thermal Resistance
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing semiconductor optical devices face challenges with increased thermal resistance and reduced joining strength due to intermediate layers or grooves in substrates, which affect the performance and reliability of compound semiconductor devices.
Innovation Solution
A semiconductor optical device design featuring a silicon substrate with terraces and a diffraction grating, where the III-V compound semiconductor device is directly joined to the terraces and diffraction grating, increasing the contact area and reducing thermal resistance while enhancing joining strength and light confinement.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If an intermediate layer made of resin is provided between the substrate and the semiconductor device, then the joining strength is improved, but the thermal resistance is increased
Solution Approach 1:
The patent removes the intermediate resin layer entirely, achieving direct contact between the semiconductor device and the substrate. This extraction of the harmful intermediate layer simultaneously improves thermal conduction while maintaining joining strength through direct bonding interfaces.
Solution Approach 2:
The patent introduces a metal layer as an intermediary between the semiconductor device and the substrate. This metal layer serves as a dual-function mediator that provides both mechanical bonding strength and excellent thermal conduction, resolving the contradiction between joining strength and thermal resistance.
2Temperature
If the substrate and the semiconductor device are directly joined together without an intermediate layer, then the thermal resistance is reduced, but the joining strength is reduced because the contact area is reduced due to grooves
Solution Approach 1:
The substrate surface is segmented into multiple regions: flat contact regions for thermal conduction and groove regions for mechanical interlocking. This segmentation allows different areas to fulfill different functions, simultaneously achieving low thermal resistance and high joining strength.
Solution Approach 2:
The patent creates a composite structure combining the substrate, metal layer, and semiconductor device with integrated groove features. This composite design leverages the complementary strengths of each component to achieve both thermal efficiency and mechanical strength.
3Use of energy by moving object
If grooves are provided in the substrate, then the light confinement is improved, but the contact area between the substrate and the semiconductor device is reduced
Solution Approach 1:
The substrate surface is divided into groove regions for light confinement and flat contact regions for thermal conduction. This spatial segmentation allows the grooves to perform their optical function while the flat regions maintain adequate contact area for heat dissipation.
Solution Approach 2:
The solution moves the light confinement function from the vertical contact interface to the horizontal plane through groove structures. By confining light in the lateral dimension via grooves rather than relying on vertical interface geometry, the contact area in the vertical dimension is preserved.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces thermal resistance and increases joining strength, improving the performance and reliability of semiconductor optical devices by enhancing light confinement and reducing leakage to the substrate.
Implementation Method 1
The waveguide is optically coupled to the diffraction grating in a direction in which the waveguide extends
Implementation Method 2
a diffraction grating in different regions in plan view
Data Source
AI summary
A semiconductor optical device includes a substrate containing silicon and including terraces, a waveguide, and a diffraction grating in different regions in plan view; and a semiconductor device formed of a III-V compound semiconductor and having an optical gain, the semiconductor device being joined to the diffraction grating and the terraces and being in contact with an upper surface of the substrate. The waveguide is optically coupled to the diffraction grating in a direction in which the waveguide extends. The terraces are located on both sides of the waveguide and the diffraction grating in a direction crossing the direction in which the waveguide extends. The substrate has a groove between each of the terraces and the waveguide. The diffraction grating is continuously connected to the terraces in the direction crossing the direction in which the waveguide extends.