III-V Semiconductor Stack Doping for Low-Stress Epitaxial Growth
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Solution Overview
Problem
Current semiconductor devices face challenges in achieving stable epitaxial growth and reducing lattice mismatch-induced stress, leading to defects in III-V semiconductor materials used in light-emitting diodes and other applications.
Innovation Solution
A semiconductor device structure is developed with a first III-V semiconductor layer doped with carbon and hydrogen, where the hydrogen doping concentration exceeds carbon, and a second III-V semiconductor layer, allowing for reduced epitaxial defects and improved electroconductive properties, and the full width at half maximum (FWHM) of the XRD spectrum is maintained at 300 arcsec or less.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional epitaxial growth methods are used on III-V semiconductor materials, then the growth process can be completed, but lattice mismatch-induced stress leads to epitaxial defects
Solution Approach 1:
The patent introduces a first III-V semiconductor layer as an intermediary buffer layer between the substrate and the subsequent epitaxial structure. This intermediate layer absorbs the lattice mismatch stress through controlled doping with carbon and hydrogen, preventing stress transmission to the upper epitaxial layers and eliminating dislocation defects.
Solution Approach 2:
The patent modifies the chemical composition parameters of the first III-V semiconductor layer by incorporating specific concentrations of carbon (1×10^16 to 1×10^18 atoms/cm³) and hydrogen (1×10^17 to 1×10^19 atoms/cm³). These parameter changes alter the lattice constant and stress distribution, enabling the layer to accommodate lattice mismatch without generating defects.
2Ease of manufacture
If the semiconductor layer structure is simplified, then the manufacturing process becomes easier, but the electroconductive properties and luminous efficiency are insufficient
Solution Approach 1:
The first III-V semiconductor layer performs multiple functions simultaneously: it serves as a stress-buffering buffer layer, an electroconductive contact layer, and a foundation for subsequent epitaxial growth. By achieving multi-functionality in a single layer, the patent maintains structural simplicity while improving electroconductive properties through controlled doping.
Solution Approach 2:
The patent creates a composite semiconductor structure by incorporating carbon and hydrogen dopants into the III-V semiconductor matrix. This composite material approach enhances the electroconductive properties and mechanical stress tolerance of the layer without requiring additional separate functional layers.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The structure provides a stable base for epitaxial growth, reduces lattice mismatch stress, and enhances the luminous efficiency and electroconductive properties of semiconductor devices, making them suitable for various applications including lighting and medical equipment.
Implementation Method 1
The first semiconductor layer comprises a first III-V semiconductor material, a first dopant, and a second dopant. In the first semiconductor layer, the doping concentration of the second dopant is greater than that of the first dopant.
Implementation Method 2
The second semiconductor layer is disposed on the first semiconductor layer and comprises a second III-V semiconductor material
Implementation Method 3
The full width at half maximum (FWHM) of the XRD spectrum tested on the first semiconductor layer is 300 arcsec or less
Data Source
AI summary
The present disclosure provides a semiconductor stack, a semiconductor device and a method for manufacturing the same. The semiconductor device includes a first semiconductor layer and a light-emitting structure. The first semiconductor layer includes a first III-V semiconductor material, a first dopant, and a second dopant. The light-emitting structure is on the first semiconductor layer and includes an active structure. In the first semiconductor layer, a concentration of the second dopant is higher than a concentration of the first dopant. The first dopant is carbon, and the second dopant is hydrogen.