III-V Transmission Layer Texturing via Controlled Decomposition
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Solution Overview
Problem
Current methods for creating a roughened surface in semiconductor devices to enhance light transmission, such as those using wet-chemical etching or textured surfaces with planarizing layers, are complex, costly, and difficult to control for non-random, optimized feature formation, limiting light extraction efficiency.
Innovation Solution
A method involving the growth of a III-V type material transmission layer with a mask layer, followed by partial decomposition to form uniform crystal facets, which are redeposited to create a stable and tunable textured surface, enhancing light transmission.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Illumination intensity
If wet-chemical etching is used to create a roughened surface, then light transmission is enhanced, but the process is complex and damages the surface of GaN
Solution Approach 1:
The patent replaces wet-chemical etching (chemical process) with a controlled decomposition process that uses thermal energy and atmospheric control to selectively remove material. This substitution eliminates the need for harsh chemicals that damage the GaN surface while achieving the same roughening effect for light extraction enhancement.
Solution Approach 2:
The patent changes the processing parameters by controlling temperature, atmospheric composition, and exposure time to achieve selective decomposition. By adjusting these parameters, the process achieves precise control over the roughening degree without causing surface damage, unlike conventional wet-chemical etching.
2Illumination intensity
If conventional texturing methods are used, then light extraction is improved, but the feature formation is random and difficult to control
Solution Approach 1:
The patent incorporates feedback control by monitoring the decomposition process in real-time and adjusting atmospheric composition and temperature to maintain consistent feature formation. This feedback mechanism ensures uniform crystal facet development across the surface, eliminating the randomness inherent in conventional texturing methods.
Solution Approach 2:
The patent applies preliminary action by first forming a uniform mask pattern before controlled decomposition. This pre-established pattern guides the subsequent decomposition process, ensuring that crystal facets form in predetermined locations with uniform size and shape, rather than randomly as in conventional methods.
3Illumination intensity
If multiple process steps are used to create textured surfaces, then light transmission is enhanced, but the manufacturing complexity and cost increase
Solution Approach 1:
The patent merges multiple process steps into a single integrated controlled decomposition process. By combining mask formation, pattern transfer, and surface roughening into one coherent process sequence using atmospheric decomposition, it eliminates the need for separate etching, texturing, and planarizing steps required by conventional methods.
Solution Approach 2:
The patent utilizes phase transitions (solid-to-gas decomposition and subsequent redeposition) to achieve surface texturing in a single process step. The controlled decomposition causes material to transition from solid GaN to gaseous species and then redeposit as crystal facets, combining multiple functions that would otherwise require separate process steps.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method achieves a uniform and stable textured surface with controlled density and size of crystal facets, improving light transmission efficiency while minimizing damage to other layers, and can be optimized for specific wavelengths and applications.
Implementation Method 1
partially decomposing the first exposed portions of the transmission layer
Implementation Method 2
the crystals are formed by redeposition
Data Source
AI summary
A method of manufacturing a semiconductor device and the device resulted thereof is disclosed. In one aspect, the device has a heterogeneous layer stack of one or more III-V type materials, at least one transmission layer of the layer stack having a roughened or textured surface for enhancement of light transmission. The method includes (a) growing the transmission layer of a III-V type material, (b) providing a mask layer on the transmission layer, the mask layer leaving first portions of the transmission layer exposed, and (c) partially decomposing the first exposed portions of the transmission layer. Suitably redeposition occurs in a single step with decomposition, so as to obtain a textured surface based on crystal facets of a plurality of grown crystals. The resulting device has a light-emitting element. The transmission layer hereof is suitably present at the top side.