Image Capturing Device Trench Region Impurity Diffusion
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Solution Overview
Problem
Impurity diffusion from the peripheral region to the pixel region in image capturing devices leads to noise and degradation of image quality, necessitating effective suppression methods to achieve high-quality images.
Innovation Solution
The implementation of a trench region with specifically arranged first and second trenches between the pixel and peripheral regions on the substrate, which are designed to prevent any straight line path from connecting the pixel region and the peripheral region without overlapping with the trenches, thereby inhibiting impurity diffusion and reducing noise.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a trench structure is formed between pixels to suppress impurity diffusion, then image quality is improved, but device complexity increases due to the need for multiple trench arrangements
Solution Approach 1:
The trench structure is segmented into two distinct types: first trenches extending from the first side of the pixel region, and second trenches extending from the opposite side. This segmentation allows each trench type to be optimized for specific diffusion paths, improving impurity suppression effectiveness while maintaining manageable structural complexity through systematic arrangement
Solution Approach 2:
The patent introduces a two-dimensional trench arrangement system where trenches are configured in both a first direction (along the first side) and a second direction (crossing the first direction). This multi-dimensional configuration creates comprehensive coverage of diffusion paths without requiring excessive trenches in a single dimension, balancing effectiveness with structural complexity
2Object-affected harmful factors
If trenches are arranged to block all straight line paths from peripheral region to pixel region, then impurity diffusion is suppressed, but manufacturing precision requirements increase
Solution Approach 1:
The patent employs a dense arrangement of trenches that extends beyond the minimum necessary coverage. By providing multiple trenches in both the first and second directions with overlapping coverage areas, the design ensures that impurity diffusion is blocked even if individual trench positions have manufacturing variations, thereby reducing the stringency of positioning precision requirements
Solution Approach 2:
Different regions of the substrate receive differentiated trench configurations: the first trenches are arranged along the first side to address diffusion from that region, while second trenches are arranged along the opposite side for diffusion from that direction. This localized optimization allows each trench group to address specific local diffusion paths, making the overall system more robust to manufacturing variations
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This arrangement effectively suppresses impurity diffusion, enhances image quality by preventing noise generation, and allows for stress relaxation between the pixel and peripheral regions, improving the overall performance of the image capturing device.
Implementation Method 1
a trench region, in which a plurality of trenches are formed in the substrate, between the pixel region and the peripheral region
Data Source
AI summary
An image capturing device is provided. The device includes a substrate comprising a pixel region, a peripheral region and a trench region, in which trenches are formed, between the pixel region and the peripheral region. The plurality of trenches include first trenches arranged to be spaced apart from each other in a first direction along a first side of an outer edge of the pixel region and second trenches arranged to be spaced apart from each other in the first direction. The first and second trenches are arranged to be spaced apart from each other in a second direction crossing the first direction. The first and second trenches are arranged so that, any straight line path which connects, without overlapping any one of the first and second trenches, the first side and the peripheral region, does not exist.