Image Intensifier Stray Particle Shield Semiconductor Structure
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Solution Overview
Problem
Image intensifiers are degraded by internal stray light or ion feedback, which can originate from anode devices such as phosphor screens or other sensor devices, leading to noise and reduced image quality in low-light applications.
Innovation Solution
A semiconductor structure is used that includes an electron multiplier region to generate multiple electrons and blocking regions to direct them towards emission areas, while shielding regions absorb stray particles, preventing their emission and subsequent noise generation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Illumination intensity
If an image intensifier uses an anode device such as phosphor screen to amplify light, then light amplification is improved, but internal stray light and ion feedback are generated causing noise and reduced image quality
Solution Approach 1:
The anode device is segmented into multiple functional regions: electron multiplication regions separated from the phosphor screen, blocking regions to prevent stray particle feedback, and shielding regions doped to absorb stray particles. This segmentation allows light amplification functions to be separated from harmful feedback generation, resolving the contradiction between light amplification and stray light reduction.
Solution Approach 2:
A semiconductor structure acts as an intermediary between the incoming electrons and the phosphor screen. This intermediary includes electron multiplication regions that amplify electrons, blocking regions that prevent direct electron feedback to the phosphor, and shielding regions that absorb stray particles. The intermediary enables light amplification while filtering out harmful feedback paths.
2Measurement precision
If blocking regions are added to direct electrons towards emission areas, then electron directionality is improved, but device complexity increases
Solution Approach 1:
Multiple functions are merged into a single semiconductor structure: electron multiplication, electron directionality control, and stray particle shielding are all integrated into one doped semiconductor component. This merging achieves electron directionality improvement without proportionally increasing device complexity, as all functions share the same physical substrate and doping structure.
Solution Approach 2:
The semiconductor structure serves multiple purposes simultaneously: it multiplies electrons through doping, directs electrons toward emission areas through blocking regions, and shields against stray particles through absorbing regions. This multi-functionality reduces the need for separate components, thereby limiting complexity increase while achieving improved electron directionality.
3Object-affected harmful factors
If shielding regions are doped to absorb stray particles, then stray particle absorption is improved, but manufacturing precision requirements increase
Solution Approach 1:
The semiconductor structure uses controlled doping parameter changes to create regions with different electrical properties. By varying dopant concentration and type across different regions (electron multiplication, blocking, and shielding regions), the structure achieves differentiated functions including stray particle absorption. This parameter-based differentiation enables stray particle absorption improvement while using standard semiconductor manufacturing techniques.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The semiconductor structure effectively amplifies light while minimizing the impact of stray particles, enhancing image quality and reducing noise in low-light conditions.
Implementation Method 1
an electron multiplier region that is doped to generate a plurality of electrons for each electron that impinges a reception surface
Implementation Method 2
shielding regions that are doped to absorb stray particles that impinge the emission surface and stop emission of the resulting electrons
Data Source
AI summary
A light intensifier includes a semiconductor structure to multiply electrons and block stray particles (e.g., photons and/or ions). The semiconductor structure includes an electron multiplier region that is doped to generate a plurality of electrons for each electron that impinges a reception surface of the semiconductor structure, blocking regions that are doped to direct the plurality of electrons towards emissions areas of an emission surface of the semiconductor structure, and shielding regions that are doped to absorb stray particles that impinge the emission surface of the semiconductor structure.