Image Light Generation Device with Differential Transistor Breakdown Voltage
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Solution Overview
Problem
Conventional image light generation devices face challenges in achieving high luminance while maintaining low power consumption, particularly due to the need for high drive voltage for blue light emission, which can reduce transistor reliability and increase power consumption.
Innovation Solution
The device employs three organic electroluminescence (EL) panels with transistors of varying sizes, where the transistor for the blue panel has a greater size and breakdown voltage than those for the green and red panels, allowing for increased drive voltage for blue light while minimizing power consumption by using lower breakdown voltages for green and red panels.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Illumination intensity
If high drive voltage is supplied to the blue light emitting element, then luminance is improved, but transistor reliability deteriorates
Solution Approach 1:
The patent applies different breakdown voltage specifications to different transistors based on their functional requirements. The blue light emitting transistor is designed with a higher breakdown voltage (10V or more) to handle the high drive voltage needed for luminance, while green and red light transistors use lower breakdown voltages (6V or more), optimizing each component for its specific purpose.
2Reliability
If high breakdown voltage is set for all transistors, then transistor reliability is improved, but power consumption increases
Solution Approach 1:
The patent implements differentiated breakdown voltage design where only the blue light emitting transistor requires high breakdown voltage (10V or more) due to its higher drive voltage needs and lower emission efficiency. The green and red light transistors are designed with lower breakdown voltages (6V or more), reducing overall power consumption while maintaining sufficient reliability for their lower voltage requirements.
3Use of energy by moving object
If low breakdown voltage is set for transistors, then power consumption is reduced, but transistor reliability deteriorates
Solution Approach 1:
The patent optimizes the balance between power consumption and reliability by assigning appropriate breakdown voltages to different transistors based on their specific requirements. The blue light transistor receives higher breakdown voltage (10V or more) to ensure reliability under high voltage operation, while green and red light transistors use lower breakdown voltages (6V or more) to minimize power consumption, achieving an optimal system-level balance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances luminance while reducing power consumption by optimizing transistor breakdown voltages, allowing for high luminance output without excessive power usage.
Implementation Method 1
organic electroluminescence (EL) panel
Implementation Method 2
color combining device that combines the color light emitted from the plurality of panels
Data Source
AI summary
An image light generation device includes a first panel configured to emit a first image light including a blue wavelength region, a second panel configured to emit a second image light including a wavelength region different from the blue wavelength region, and a color combining prism configured to combine the first image light and the second image light. The first panel includes a plurality of first pixels, each of the plurality of first pixels includes a first light emitting element, and a first transistor provided corresponding to the first light emitting element, the second panel includes a plurality of second pixels, each of the plurality of second pixels includes a second light emitting element, and a second transistor provided corresponding to the second light emitting element, and a size of the first transistor is greater than a size of the second transistor.