Image Pickup Apparatus Passivation Film Hydrogen Control
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Solution Overview
Problem
Existing image pickup apparatuses face challenges in simultaneously improving the noise reduction in the pixel circuit region and the reliability of the peripheral circuit region due to the limitations of hydrogen termination and supply in the semiconductor layer, where hydrogen can reduce noise in the pixel circuit but decrease reliability in the peripheral circuit.
Innovation Solution
A method for manufacturing an image pickup apparatus involving a semiconductor layer with a passivation film extending from the pixel circuit region to the peripheral circuit region, including a member and conductive lines between the semiconductor layer and the passivation film, where the passivation film has a through-hole in the peripheral circuit region to discharge hydrogen, reducing the hydrogen supply to the peripheral circuit and enhancing the reliability of the peripheral transistor.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If hydrogen termination is applied to the semiconductor layer surface to reduce noise in the pixel circuit region, then noise reduction is achieved, but hydrogen diffuses into the peripheral circuit region causing low reliability
Solution Approach 1:
The passivation film is divided into different regions with different hydrogen permeability characteristics. The first passivation film region has high hydrogen permeability to supply hydrogen to the pixel circuit region for noise reduction, while the second passivation film region has low hydrogen permeability to prevent hydrogen from reaching the peripheral circuit region, thereby maintaining its reliability.
Solution Approach 2:
Different regions of the passivation film are assigned different hydrogen permeability properties to meet the distinct requirements of different circuit regions. The passivation film structure is optimized locally: in the pixel circuit region, it allows hydrogen diffusion for noise reduction, while in the peripheral circuit region, it blocks hydrogen to ensure reliability.
2Object-affected harmful factors
If a passivation film is used as a hydrogen supply source to improve pixel circuit characteristics, then noise reduction is achieved, but hydrogen supply to the peripheral circuit region cannot be sufficiently controlled
Solution Approach 1:
The passivation film is segmented into functionally distinct regions: a first passivation film region with high hydrogen permeability that serves as a hydrogen supply source for the pixel circuit region, and a second passivation film region with low hydrogen permeability that acts as a hydrogen barrier for the peripheral circuit region. This segmentation enables differential hydrogen supply control.
Solution Approach 2:
The passivation film exhibits spatially varying hydrogen permeability properties tailored to the specific needs of underlying circuit regions. The local quality of the passivation film is optimized to provide hydrogen where needed (pixel circuit) while preventing hydrogen intrusion where it is harmful (peripheral circuit).
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively reduces noise in the pixel circuit region while improving the reliability of the peripheral circuit region by controlling hydrogen supply, thereby enhancing the overall performance of the image pickup apparatus.
Implementation Method 1
hydrogen diffusing from the passivation film to the semiconductor layer
Implementation Method 2
the passivation film can prevent hydrogen diffusing from the passivation film to the semiconductor layer from diffusing into the outside
Data Source
AI summary
At least one of a passivation film extending from a pixel circuit region to a peripheral circuit region and a member disposed between a semiconductor layer and the passivation film in the peripheral circuit region contains hydrogen. The passivation film in the peripheral circuit region has a portion overlapping one conductive line of the plurality of conductive lines in a direction perpendicular to a main surface of the semiconductor layer, the one conductive line being closest to the passivation film among the plurality of conductive lines. The passivation film in the peripheral circuit region has a through-hole, the through-hole including a portion not overlapping the one conductive line in the direction perpendicular to the main surface of the semiconductor layer.