Image Sensor Black Level Structure for Higher Full-Well Capacity
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Solution Overview
Problem
Semiconductor image sensors face reduced full-well capacity due to lowered power consumption, necessitating an improvement in image sensor design to maintain performance while managing power usage effectively.
Innovation Solution
The image sensor device incorporates a contact pad structure extending from the contact pad region to the black level correction region, with a light blocking structure and dielectric layers to manage electrical and optical interactions, and applying a negative voltage to increase the full-well capacity by enhancing the energy barrier during operation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If power consumption is lowered to achieve smaller dimensions and high performance, then device size and performance are improved, but full-well capacity is reduced
Solution Approach 1:
The patent applies parameter changes by adjusting the voltage potential in the black level correction region to a negative value (e.g., -0.5V to -5V relative to ground). This voltage parameter modification creates an additional energy barrier that prevents charge leakage, thereby increasing the full-well capacity without requiring increased device dimensions or power consumption. The negative voltage potential fundamentally changes the electrical parameter of the BLC region to resolve the contradiction between low power consumption and high full-well capacity.
2Use of energy by moving object
If power consumption is reduced, then energy efficiency is improved, but full-well capacity decreases
Solution Approach 1:
The invention changes the voltage parameter of the BLC region from ground potential to negative potential, creating an energy barrier that reduces charge leakage. This parameter change allows the system to maintain low power consumption while simultaneously increasing full-well capacity, as the negative voltage prevents charge loss without requiring additional power for charge generation or storage.
Solution Approach 2:
The negative voltage potential acts as an intermediary mechanism between the pixel region and the readout circuitry. By introducing this intermediate voltage level in the BLC region, the patent creates an energy barrier that mediates charge flow, preventing leakage while maintaining the low power consumption architecture. This intermediary voltage level resolves the contradiction by providing a passive charge retention mechanism.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances the full-well capacity of the image sensor device by increasing the energy barrier, thereby improving its performance and light handling capabilities while maintaining reduced power consumption.
Implementation Method 1
a light blocking structure disposed on and through the dielectric layer in the black level correction region
Implementation Method 2
a contact pad structure extending from the contact pad region to the black level correction region
Data Source
AI summary
An image sensor device and methods of forming the same are described. In some embodiments, the device includes a substrate, a contact pad structure extending from a contact pad region to a black level correction region, a dielectric layer disposed over the substrate in the black level correction region, and a light blocking structure disposed on and through the dielectric layer in the black level correction region. A first portion of the contact pad structure disposed in the black level correction region is in contact with the light blocking structure, and the light blocking structure is in contact with the substrate.