Image Sensor Depth Perception via Opposite Phase Gate Control
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Solution Overview
Problem
Conventional image sensors can only perceive two-dimensional image information and lack the ability to detect depth, which is essential for capturing three-dimensional images.
Innovation Solution
An image sensor design incorporating a substrate with visible and non-visible light regions, first and second wells of a specific conductivity type, and gates receiving opposite phase voltages to store and measure photocharges for depth perception, allowing the sensor to capture both image and depth information.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of information
If conventional image sensors are used, then image information can be perceived, but depth information cannot be perceived
Solution Approach 1:
The sensor is divided into distinct functional regions: a visible light region for capturing image information and a non-visible light region for capturing depth information. This segmentation allows each region to be optimized for its specific function while working together to provide comprehensive 3D imaging capability.
Solution Approach 2:
The sensor substrate is designed to perform multiple functions simultaneously - it captures both visible light for image formation and non-visible light for depth measurement. The dual-region structure enables a single device to provide both 2D image and 3D depth information, eliminating the need for separate sensors.
2Adaptability or versatility
If dual-region substrate is used, then both image and depth information can be captured, but manufacturing complexity increases
Solution Approach 1:
Different regions of the substrate are assigned different properties: the visible light region is optimized for image capture with appropriate photodetectors and filters, while the non-visible light region is optimized for depth sensing with specialized structures. This local optimization allows each region to be manufactured using techniques best suited for its specific function.
Solution Approach 2:
The patent employs nested structures where gates are positioned within or adjacent to the wells, and multiple functional layers are integrated within the substrate. This nesting approach allows complex functionality to be achieved within a compact structure that can be manufactured using standard semiconductor fabrication processes.
3Measurement precision
If gates with opposite phase voltages are applied, then photocharges can be measured for depth perception, but device complexity increases
Solution Approach 1:
The gates are driven with periodic opposite-phase voltages that modulate the potential wells in a synchronized manner. This periodic modulation allows photocharges to be transferred to and from the wells in a controlled sequence, enabling precise depth measurement through correlation of the modulated signal with the reflected light phase.
Solution Approach 2:
The measurement system uses feedback by comparing the phase of the reflected non-visible light with the phase of the modulating voltage applied to the gates. This feedback mechanism allows the system to accurately determine depth by detecting phase shifts that correspond to different distance measurements.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables the image sensor to perceive depth information in addition to traditional image information, enhancing its capability to capture three-dimensional images by accurately measuring the distance between the sensor and objects.
Implementation Method 1
a first gate and a second gate configured to receive voltages of opposite phases, respectively, and apply voltages to the first well and the second well, respectively
Data Source
AI summary
Provided is an image sensor having a depth sensor. The image sensor includes a substrate including a visible light region and a non-visible light region, a first well and a second well having a first conductivity type and in the non-visible light perception region, and a first gate and a second gate configured to receive voltages of opposite phases, respectively, and apply voltages to the first well and the second well, respectively.