Image Sensor Floating-Diffusion Layout for Diagonal Pixel Addition
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Solution Overview
Problem
Existing solid-state image capturing elements face limitations in flexibility of pixel addition arrangement direction, particularly in directions other than the vertical, such as in the Bayer array, where green pixels are arranged diagonally.
Innovation Solution
A solid-state image capturing element with floating diffusion layers arranged in perpendicular directions, utilizing connection circuits and transistors controlled by control signals to connect floating diffusion layers to wires, allowing pixel addition in various directions, including horizontal and diagonal arrangements.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If connection transistors are provided between two floating diffusion layers adjacent in the vertical direction, then pixel addition can be performed on two pixels arranged in the vertical direction, but the arrangement direction of pixel addition is limited to the vertical direction and flexibility is lacking
Solution Approach 1:
The connection transistor is designed to connect floating diffusion layers in multiple directions (vertical, horizontal, and diagonal) rather than being limited to a single direction. This universal connection capability allows the same transistor structure to support pixel addition operations in various arrangement directions, thereby improving flexibility without requiring separate connection mechanisms for each direction.
Solution Approach 2:
The connection transistor operates dynamically by selectively connecting different floating diffusion layers based on control signals. The transistor can switch between connecting vertical neighbors, horizontal neighbors, or diagonal pixels depending on the control signal applied, enabling flexible pixel addition operations in different directions without changing the physical structure.
2Adaptability or versatility
If connection transistors are provided between floating diffusion layers, then pixel addition functionality is achieved, but wiring complexity increases
Solution Approach 1:
Multiple connection transistors that would traditionally be required for different connection directions are merged into a single transistor structure. This unified connection transistor can perform various connection functions (vertical, horizontal, diagonal) by responding to different control signals, thereby reducing the total number of transistors and simplifying the wiring structure while maintaining pixel addition capability.
Solution Approach 2:
The connection transistor is designed as a universal component that can connect floating diffusion layers in multiple directions simultaneously or selectively. This multi-functional design eliminates the need for separate dedicated connection transistors for each direction, reducing wiring complexity while preserving comprehensive pixel addition functionality.
Data Source
AI summary
A solid-state image capturing element includes: a pair of first floating diffusion layers arranged in a direction perpendicular to a predetermined direction; a pair of second floating diffusion layers arranged in the perpendicular direction and adjacent to the pair of first floating diffusion layers in the predetermined direction; a first connection circuit configured to select at least one of the pair of first floating diffusion layers and to connect the selected first floating diffusion layer to a predetermined first wire; a second connection circuit configured to select at least one of the pair of second floating diffusion layers and to connect the selected second floating diffusion layer to the first wire; and an output circuit configured to output a signal according to an amount of charge of at least one of the pair of first floating diffusion layers or the pair of second floating diffusion layers.