Solid-State Image Sensor Exposure Layout for HDR and Phase Detection
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Solution Overview
Problem
Existing solid-state imaging devices cannot simultaneously acquire a signal for phase difference detection and generate a high dynamic range image due to the inability to change exposure times across different light receiving regions under an on-chip lens.
Innovation Solution
A solid-state imaging device with a pixel array unit where multiple pixels of the same color share pixel transistors, with some pixels set to a first exposure time and others set to a shorter second exposure time, allowing for simultaneous phase difference detection and high dynamic range image generation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If a plurality of light receiving regions is formed for one on-chip lens with a separating region prevented from light shielding, then nonuniformity of sensitivity in the plurality of light receiving regions is reduced, but a signal to generate a high dynamic range image cannot be acquired because exposure time cannot be changed in the plurality of light receiving regions
Solution Approach 1:
The pixel array is divided into first pixel regions and second pixel regions under one on-chip lens, with each region having independent exposure time control. This segmentation allows different exposure times (first exposure time for first pixel regions, second exposure time for second pixel regions) while maintaining sensitivity uniformity through the shared optical path and preventing light shielding in separating regions.
Solution Approach 2:
The exposure time is made dynamic and adjustable for different pixel regions rather than being fixed. The control circuit can independently set first exposure time for first pixel regions and second exposure time for second pixel regions, enabling adaptability for different imaging conditions while maintaining the physical structure that ensures sensitivity uniformity.
2Device complexity
If multiple pixels share pixel transistors to reduce device complexity, then manufacturing cost and device complexity are reduced, but the ability to independently control exposure time for each pixel is limited
Solution Approach 1:
Pixels are grouped into first pixel regions and second pixel regions, with each region sharing transistors but maintaining independent exposure time control through region-specific control circuits. This allows multiple pixels to share transistors (reducing complexity) while still enabling independent exposure time adjustment for each region.
Solution Approach 2:
The shared transistors serve multiple pixels within each region, providing universal functionality. Meanwhile, the control circuit provides multi-functionality by being able to independently control exposure time for different regions, achieving both complexity reduction and operational flexibility.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables the simultaneous acquisition of phase difference detection signals and high dynamic range images by varying exposure times across pixels under a single on-chip lens, improving image quality and functionality.
Implementation Method 1
a photodiode 21 and a transfer transistor 22
Data Source
AI summary
The present technology relates to a solid-state imaging device, a driving method therefor, and an electronic apparatus capable of acquiring a signal to detect phase difference and a signal to generate a high dynamic range image at the same time. The solid-state imaging device includes a pixel array unit in which a plurality of pixels that receives light of a same color is arranged under one on-chip lens. The plurality of pixels uses at least one pixel transistor in a sharing manner, some pixels out of the plurality of pixels are set to have a first exposure time, and other pixels are set to have a second exposure time shorter than the first exposure time. The present technology can be applied to, for example, a solid-state imaging device or the like.