Solid-State Image Sensor Hybrid Layer Light Separation
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Solution Overview
Problem
Solid-state image sensors face challenges in design and manufacturing due to energy imbalances caused by inclined incident light, affecting the uniformity of sensitivity in photoelectric conversion elements.
Innovation Solution
A hybrid layer is introduced between the semiconductor substrate and the color filter layer, featuring a first and second partition structure with a transparent layer in between, where the refractive indices of the partition structures are lower than the transparent layer, helping to separate light and enhance sensitivity uniformity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a conventional solid-state image sensor structure is used, then the device is simple to manufacture, but energy imbalance occurs in adjacent photoelectric conversion elements due to inclined incident light, reducing sensitivity uniformity
Solution Approach 1:
The sensor surface is divided into first and second types of photoelectric conversion elements with different structures. The first type includes a first light-shielding structure extending from the first surface, while the second type includes a second light-shielding structure extending from the second surface. This segmentation allows each element type to optimize light reception for its specific orientation, resolving the energy imbalance caused by inclined incident light.
Solution Approach 2:
Different light-shielding structures are applied locally to different types of photoelectric conversion elements based on their orientation. Elements receiving light primarily from one surface have light-shielding structures extending from that surface, while elements receiving light from the opposite surface have structures extending from their respective surface. This local customization ensures uniform sensitivity across all elements regardless of incident light angle.
2Manufacturing precision
If light-shielding structures extend from both surfaces, then sensitivity uniformity is improved, but device complexity and manufacturing difficulty increase
Solution Approach 1:
The manufacturing process is segmented into distinct steps for forming first and second types of photoelectric conversion elements. First, a preliminary light-shielding structure is formed, then selective removal and extension steps are performed to create the final dual-surface light-shielding structures. This segmented approach makes the complex manufacturing process more manageable and controllable.
Solution Approach 2:
A preliminary light-shielding structure is formed before the final light-shielding structures are created. This preliminary structure serves as a foundation that is subsequently modified through selective removal and extension to form the final dual-surface light-shielding structures, simplifying the overall manufacturing process.
3Quantity of substance
If photoelectric conversion elements are densely packed, then pixel density is increased, but energy imbalance between adjacent elements worsens due to inclined incident light
Solution Approach 1:
The pixel array is segmented into first and second types of photoelectric conversion elements that are alternately or regularly arranged. Each type has light-shielding structures optimized for its orientation, allowing dense packing while maintaining uniform sensitivity. The segmentation ensures that even in high-density configurations, each element receives appropriate light shielding for its specific incident light angle.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The hybrid layer improves the uniformity of sensitivity and quality of image signals by effectively managing light separation, addressing the energy imbalance issue in solid-state image sensors.
Implementation Method 1
The refractive index of the first partition structure and the refractive index of the second partition structure are lower than the refractive index of the transparent layer
Data Source
AI summary
The solid-state image sensor includes a semiconductor substrate having first and second photoelectric conversion elements, a color filter layer, and a hybrid layer. The isolation structure is disposed between the first and second photoelectric conversion elements. The color filter layer is disposed above the semiconductor substrate. The hybrid layer is disposed between the semiconductor substrate and the color filter layer. The hybrid layer includes a first partition structure, a second partition structure, and a transparent layer. The first partition structure is disposed to correspond to the isolation structure. The second partition structure is surrounded by the first partition structure. The transparent layer is between the first partition structure and the second partition structure. The refractive index of the first partition structure and the refractive index of the second partition structure are lower than the refractive index of the transparent layer.