Image Sensor With IGZO Pattern for Global Shutter
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Solution Overview
Problem
Current image sensors face challenges in achieving improved integration and global shutter operation, which affects their ability to capture sharp images without signal loss between pixels.
Innovation Solution
The image sensor design incorporates a semiconductor substrate with a photoelectric conversion region and an indium-gallium-zinc oxide (IGZO) semiconductor pattern, along with a transfer gate, to enable efficient charge transfer and storage, allowing for global shutter operation and minimizing signal loss between pixels.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If conventional image sensor structures are used, then manufacturing is simpler, but integration is limited and global shutter operation cannot be achieved
Solution Approach 1:
The sensor is divided into distinct functional regions: photoelectric conversion regions for light detection, oxide semiconductor patterns for charge storage, and transfer gates for charge transfer. This segmentation enables global shutter operation by allowing independent control of charge generation, storage, and transfer functions, thereby achieving versatility without excessive complexity
Solution Approach 2:
The oxide semiconductor patterns are positioned in recesses that extend from the first surface toward the second surface of the substrate, utilizing the vertical dimension. This three-dimensional arrangement allows charge storage regions to be integrated beneath the photoelectric conversion regions, improving integration capability while maintaining a compact planar structure
2Reliability
If charge transfer between pixels is improved, then signal loss is reduced, but device complexity increases
Solution Approach 1:
The oxide semiconductor patterns serve as intermediary charge storage nodes between the photoelectric conversion regions and the readout circuitry. These patterns receive charges from the photoelectric conversion region through the channel region and hold them temporarily, enabling efficient charge transfer without direct connection between pixels, thus improving reliability while maintaining manageable complexity
Solution Approach 2:
The patent replaces complex mechanical or multi-component charge transfer mechanisms with a simplified field-effect transistor-based transfer gate system. The transfer gate uses electrical field control to modulate charge flow through the channel region, achieving reliable charge transfer with minimal structural complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design enhances the image sensor's integration capabilities and enables global shutter operation, resulting in the capture of sharp images by effectively managing charge transfer and storage, thereby improving image quality.
Implementation Method 1
The photodiode serves to convert incident light into electrical signals
Implementation Method 2
the oxide semiconductor pattern receives charges from the photoelectric conversion region through the channel region
Data Source
AI summary
An image sensor is provided and includes a semiconductor substrate having a first conductivity type, a photoelectric conversion region in the semiconductor substrate and having a second conductivity type, an oxide semiconductor pattern adjacent to a first surface of the semiconductor substrate, and a transfer gate on the first surface and adjacent to the photoelectric conversion region and the oxide semiconductor pattern.