Solid-State Image Sensor Ion Implantation Alignment
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Solution Overview
Problem
Conventional CMOS-type solid-state image capturing devices face inconsistencies in reading characteristics between light receiving sections due to inconsistent formation of electric charge accumulation and transfer sections, leading to incomplete signal transfer and residual images.
Innovation Solution
The method involves controlling the ion implantation direction to ensure consistent alignment of the impurity regions of the transfer sections and electric charge accumulation regions with respect to the reading gate electrodes, thereby maintaining consistent reading characteristics across light receiving sections.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If ion implantation is performed without controlling the implantation direction, then the manufacturing process is simpler, but the reading characteristic consistency between pixel sections deteriorates
Solution Approach 1:
The patent controls the ion implantation direction as a critical parameter to ensure that impurity regions are formed at consistent positions relative to gate electrodes across all pixel sections. This parameter control transforms the implantation process from a simple deposition to a precision alignment operation, resolving the contradiction between manufacturing simplicity and reading characteristic consistency.
Solution Approach 2:
The patent performs preliminary alignment of the ion implantation direction with the gate electrode arrangement before actual implantation. This preliminary action ensures that impurity regions are consistently positioned relative to gate electrodes, establishing consistent reading characteristics before the pixel array is completed and tested.
2Ease of manufacture
If the impurity region position is inconsistent with the gate electrode, then the manufacturing process is easier, but the signal transfer completeness deteriorates
Solution Approach 1:
The patent establishes a specific geometric relationship between the ion implantation direction and the gate electrode arrangement, ensuring that impurity regions are formed at optimal positions that guarantee complete signal transfer. This parameter control transforms the alignment from a tolerant approximation to a precise configuration.
Solution Approach 2:
The patent uses the gate electrode position as a reference feedback to adjust and confirm the ion implantation direction. By ensuring the implantation direction aligns with the gate electrode arrangement, the process self-corrects to achieve optimal impurity region positioning for complete signal transfer.
3Ease of manufacture
If the electric charge accumulation region is not properly aligned, then the manufacturing process is simpler, but the reading voltage increases
Solution Approach 1:
The patent controls the ion implantation direction to precisely position electric charge accumulation regions relative to gate electrodes. This parameter control ensures optimal alignment that reduces the voltage required for reading operations, transforming the process from a low-precision deposition to a precision alignment operation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach ensures complete signal transfer, reduces residual images, and lowers the reading voltage by maintaining consistent reading characteristics across light receiving sections.
Implementation Method 1
performing an ion implantation process from an ion implantation direction wherein the location of an edge surface of an impurity region of a transfer section and the location of an edge surface of a reading gate electrode corresponding to the impurity region match each other
Data Source
AI summary
A method for manufacturing a solid-state image capturing device according to the present invention, in which from a plurality of light receiving sections for photoelectrically converting incident light into signal electric charge, the signal electric charge is read to an electric charge detection section through transfer sections located under respective reading gate electrodes, each electric charge detection being shared by each of the plurality of light receiving sections, the method including: transfer section impurity region forming step of performing an ion implantation process from an ion implantation direction wherein the location of an edge surface of an impurity region of the transfer section and the location of an edge surface of the reading gate electrode corresponding to the impurity region match each other at each reading gate electrode.