Image Sensor Nanostructures for High-Resolution Light Absorption
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Solution Overview
Problem
Semiconductor devices face challenges in achieving high pixel resolution with limited size, leading to decreased light absorption capability and increased crosstalk among sensing pixels.
Innovation Solution
Incorporation of nanostructures with specific circle equivalent diameters and configurations on the substrate surface to enhance light absorption efficiency, including protrusion and embedded nanostructures in CMOS image sensor devices.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If more sensing pixels are arranged in an image sensor device with limited size, then pixel resolution is improved, but light absorption capability decreases and crosstalk increases
Solution Approach 1:
The patent introduces vertical nanostructures (protrusions and embedded structures) that extend into the light absorption region, transforming a two-dimensional pixel arrangement into a three-dimensional light-absorbing architecture. This vertical dimension allows additional light-trapping functionality without increasing the planar pixel count, thereby maintaining high resolution while improving light absorption capability.
Solution Approach 2:
The patent applies different nanostructure configurations to different regions of the light absorption area. Protrusion nanostructures are placed in specific locations with optimized dimensions and spacing to locally enhance light absorption. This localized approach allows tailored optical performance in critical regions while maintaining overall device compactness and resolution.
2Measurement precision
If more sensing pixels are arranged in an image sensor device with limited size, then pixel resolution is improved, but crosstalk between pixels increases
Solution Approach 1:
The patent segments the light absorption region by introducing nanostructures that create distinct optical pathways and isolation barriers between adjacent pixels. The protrusion and embedded nanostructures act as physical and optical dividers, confining light to specific pixel regions and preventing cross-talk while maintaining high pixel density.
Solution Approach 2:
By utilizing the vertical dimension through nanostructures, the patent creates additional separation between pixels in the depth direction. This three-dimensional arrangement reduces lateral crosstalk by establishing optical isolation barriers that extend vertically, allowing higher pixel density without proportionally increasing pixel interference.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Improves light absorption capability and reduces noise in semiconductor devices, particularly for visible, infrared, and ultraviolet light, enhancing dynamic range and overall performance.
Implementation Method 1
the circle equivalent diameters of the projected portions of the nanostructures on the upper surface of the substrate are in a predetermined range of the visible light wavelength band, an infrared light wavelength band and/or an ultraviolet light wavelength band, in order to enhance visible light, infrared light and/or ultraviolet light absorption
Data Source
AI summary
An image sensor device includes nanostructures for improving light absorption efficiency. The image sensor device includes a substrate doped with a first dopant of a first conductivity type, and a light absorption region over the substrate. The light absorption region is doped with a second dopant of a second conductivity type. The second conductivity type is different from the first conductivity type. The nanostructures overlap the light absorption region. One of the nanostructures has a bottom surface at a different level than a top surface of the light absorption region.