Image Sensor Nanostructures for High Pixel Light Absorption
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The challenge in semiconductor devices, such as CMOS image sensors, is to enhance light absorption efficiency while maintaining high pixel density, which is compromised by decreased light absorption capability and increased crosstalk due to the need for more sensing pixels in a limited size.
Innovation Solution
The implementation of nanostructures with specific circle equivalent diameters and arrangements on the substrate surface to improve light absorption across various wavelength bands, including visible, infrared, and ultraviolet light, by forming protrusion or embedded nanostructures that enhance dynamic range and reduce noise.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If more sensing pixels are arranged in an image sensor device to meet high pixel resolution requirements, then pixel resolution is improved, but light absorption capability decreases
Solution Approach 1:
The patent introduces a depth dimension by forming recesses in the substrate and placing light-absorbing materials within these recesses. This vertical dimensionality change allows light absorption enhancement without increasing lateral pixel density, thereby resolving the contradiction between high pixel resolution and light absorption capability
Solution Approach 2:
The patent utilizes recesses with light-absorbing materials that create a porous-like structure on the substrate surface. This increases the effective light absorption area without occupying additional lateral space, enabling both high pixel resolution and improved light absorption capability
2Measurement precision
If more sensing pixels are arranged in an image sensor device to meet high pixel resolution requirements, then pixel resolution is improved, but crosstalk of the sensing pixels increases
Solution Approach 1:
By moving the light absorption function to the vertical dimension through recesses, the patent reduces lateral light spreading between adjacent pixels. This dimensional separation effectively reduces crosstalk while maintaining high pixel resolution
Solution Approach 2:
The substrate surface is segmented into multiple recesses, each serving as an independent light absorption zone for a sensing pixel. This segmentation isolates the light absorption paths of adjacent pixels, reducing optical crosstalk between them
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach improves light absorption efficiency and reduces noise in semiconductor devices, effectively addressing the limitations of high pixel density and crosstalk, thereby enhancing the performance of image sensor devices.
Implementation Method 1
enhance light absorption across various wavelength bands, including visible, infrared, and ultraviolet light
Data Source
AI summary
An image sensor device includes nanostructures for improving light absorption efficiency. The image sensor device includes a substrate, a light absorption region, and a nanostructure array. The light absorption region is over the substrate. The nanostructure array us over the light absorption region. The nanostructure array includes a plurality of nanostructures repeatedly arranged from a top view.