Image Sensor Penetration Wiring for Crosstalk Reduction
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Solution Overview
Problem
Current image sensors face challenges in enhancing resolution and reducing unit pixel size while effectively managing light and electrical charge within the pixel array, leading to limitations in light-conversion efficiency and optical/electrical crosstalk.
Innovation Solution
The proposed image sensor design incorporates a semiconductor layer with an organic photoelectric conversion portion and a penetration wiring system using deep trench isolation, which electrically connects the organic photoelectric conversion portion to the pixel circuit, while a color filter layer manages light conversion across different wavelength bands, and the penetration wiring blocks external light and charge introduction.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If the unit pixel size is reduced to enhance resolution, then the resolution is improved, but the light-conversion efficiency deteriorates
Solution Approach 1:
The patent transitions from a planar arrangement to a three-dimensional stacked architecture where the organic photoelectric conversion portion is positioned above the semiconductor layer. This vertical stacking allows light to be converted more efficiently within a compact footprint, maintaining high resolution while improving light-conversion efficiency by utilizing the third dimension for optical path management.
Solution Approach 2:
The penetration wiring structure with deep trench isolation acts as an intermediary element that selectively blocks stray light and electrical crosstalk while allowing necessary electrical connections. This mediator prevents harmful lateral interactions between adjacent pixels, thereby preserving light-conversion efficiency in small-pixel configurations.
2Measurement precision
If the unit pixel size is reduced to enhance resolution, then the resolution is improved, but the optical crosstalk increases
Solution Approach 1:
The harmful optical crosstalk is extracted and blocked by the deep trench isolation structure filled with penetration wiring. This isolation mechanism removes the problematic lateral light propagation between adjacent pixels, enabling high-resolution imaging without optical interference.
3Measurement precision
If the unit pixel size is reduced to enhance resolution, then the resolution is improved, but the electrical crosstalk increases
Solution Approach 1:
Electrical crosstalk is extracted and blocked by the deep trench isolation structure. The penetration wiring configuration electrically isolates adjacent pixels laterally while maintaining necessary vertical connections, thereby preventing harmful electrical interference between closely spaced pixels in high-resolution configurations.
4Use of energy by moving object
If the organic photoelectric conversion portion is added to convert light, then the light-conversion efficiency is improved, but the device complexity increases
Solution Approach 1:
The organic photoelectric conversion portion is merged with the semiconductor layer in a stacked configuration. This integration combines multiple functions (light conversion, charge generation, and electrical connection) into a compact vertical structure, improving light-conversion efficiency while minimizing the increase in device complexity through spatial consolidation.
Solution Approach 2:
The photoelectric conversion function is added in the vertical dimension rather than expanding laterally. This dimensional transition allows the system to improve light-conversion efficiency without proportionally increasing device complexity, as the stacked architecture utilizes the third dimension for functional integration.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design enhances light-conversion efficiency, reduces unit pixel size, and minimizes optical/electrical crosstalk, thereby improving image sensor resolution and precision.
Implementation Method 1
an organic photoelectric conversion portion that is formed on the second side of the semiconductor layer in the first direction and that converts light in a first wavelength band into electrical signals
Implementation Method 2
a photodetector that is formed in the semiconductor layer and contacts the first side of the semiconductor layer and that accumulates charges according to the intensity of light that passes through the color filter layer
Data Source
AI summary
An image sensor includes a semiconductor layer, an organic photoelectric conversion portion disposed on an upper surface of the semiconductor layer and that converts a color component of incident light into a corresponding electrical signal, a transistor layer disposed on a lower surface of the semiconductor layer and including a pixel circuit that receives the electrical signal, and penetration wiring that laterally penetrates a side surface of the semiconductor layer between the upper and lower surfaces and that electrically connects the organic photoelectric conversion portion with the pixel circuit to communicate the electrical signal.