Image Sensor Pixel Architecture for High Dynamic Range and Global Shutter

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Solution Overview

Problem

Existing image sensor technologies face limitations in simultaneously achieving high dynamic range and global shutter modes, as well as variable sensitivity, due to constraints in charge handling capacity and operational modes.

Innovation Solution

A pixel architecture with multiple capacitance nodes and independent readout paths allows for selective connection and disconnection of additional capacitance to the photosensor, enabling variable sensitivity and high dynamic range modes, while also supporting global shutter operation by synchronizing the integration and readout phases across all pixels.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If an extra capacitor is added in parallel to increase charge handling capacity, then the dynamic range is improved, but the device complexity increases

Engineering Contradiction:
Improvecharge handling capacityVSAvoiddevice complexity
Core Design Contradiction:
Quantity of substanceVSDevice complexity

Solution Approach 1:

The patent combines the integration capacitor and storage capacitor into a single physical capacitor structure that can function as both integration and storage capacitor through selective connection via transistors. This merging approach increases charge handling capacity without proportionally increasing device complexity, as the same hardware component serves multiple functions depending on its connection state.

Inventive Principle:
Principle #5Merging (Combining)

2Adaptability or versatility

If a select transistor is added to enable variable sensitivity mode, then the adaptability is improved, but the device complexity increases

Engineering Contradiction:
Improvevariable sensitivityVSAvoiddevice complexity
Core Design Contradiction:
Adaptability or versatilityVSDevice complexity

Solution Approach 1:

The select transistor M5304 serves multiple functions: it enables variable sensitivity mode by connecting or disconnecting the storage capacitor, and also enables global shutter mode by controlling the timing of charge transfer. This multi-functionality approach increases adaptability without proportionally increasing device complexity, as a single transistor component handles multiple operational requirements.

Inventive Principle:
Principle #6Universality (Multi-functionality)

3Measurement precision

If the readout time is increased to read the sensor plane, then the measurement precision is improved, but motion distortion increases

Engineering Contradiction:
Improveimage qualityVSAvoidmotion distortion
Core Design Contradiction:
Measurement precisionVSObject-affected harmful factors

Solution Approach 1:

The global shutter mechanism uses a storage capacitor to preliminarily store the integrated charge from all pixels simultaneously at the end of the integration period. This preliminary storage action freezes the image data before readout begins, allowing the subsequent readout process to take place without affecting the captured image data, thus eliminating motion distortion during the extended readout period.

Inventive Principle:
Principle #10Preliminary action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This architecture enhances charge handling capacity, allows for multiple operating modes, and reduces motion distortion by enabling simultaneous high sensitivity and high full well operations, along with global shutter functionality, thereby improving image quality and handling various illumination conditions effectively.

Implementation Method 1

a photodiode PD 101 converts received radiation into a charge

Methodology Applied
Scientific EffectPhotoelectric Effect: Photoelectric Effect

Data Source

PatentUS8279312B2Image sensor element with multiple outputs
Publication Date: 2012.10.02 STMICROELECTRONICS FRANCE
  • US8279312B2 patent drawing
  • US8279312B2 patent drawing
  • US8279312B2 patent drawing

AI summary

The present invention concerns an image sensor having a plurality of pixels each including a photosensor, a first node having a first capacitance connected to the photosensor, a second node having a second capacitance and selectively connected to the photosensor, and reading circuitry operable to read independently a first voltage value stored at the first node and a second voltage value stored at the second node.