Solid State Image Sensor Pixel Electrode Shielding Capacitive Coupling

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Solution Overview

Problem

Signal mixture due to electric capacitive coupling between adjacent pixels in solid state image sensors reduces resolution and causes color mixture, especially when there is a large potential difference between charge accumulation units in surrounding pixels.

Innovation Solution

Incorporating an additional electrode between the lower electrodes of adjacent pixels in a solid state image sensor, which shields capacitive coupling and allows for independent voltage control of each pixel, thereby reducing signal mixture and improving resolution.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If adjacent pixels are arranged closely to increase pixel density, then productivity and sensor resolution are improved, but signal mixture due to electric capacitive coupling between adjacent pixels increases

Engineering Contradiction:
Improvepixel densityVSAvoidsignal mixture
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

A ground electrode is introduced as an intermediary element between adjacent pixel electrodes. This ground electrode acts as a mediator that intercepts and dissipates electric field lines that would otherwise couple adjacent pixels, thereby reducing capacitive coupling while allowing pixels to be arranged closely for high density

Inventive Principle:
Principle #24Intermediary (Mediator)

2Use of energy by moving object

If the photoelectric conversion film thickness is increased to improve photoelectric conversion efficiency, then energy conversion is improved, but manufacturing precision and device complexity increase

Engineering Contradiction:
Improvephotoelectric conversion efficiencyVSAvoidfilm thickness control
Core Design Contradiction:
Use of energy by moving objectVSManufacturing precision

Solution Approach 1:

The patent optimizes the thickness parameter of the photoelectric conversion film to achieve high photoelectric conversion efficiency without excessive thickness. Additionally, the ground electrode structure compensates for thinner film designs by reducing signal loss and interference, allowing flexible optimization of the thickness parameter within a broader range

Inventive Principle:
Principle #35Parameter changes

3Reliability

If a ground electrode is added between adjacent pixels to reduce capacitive coupling, then signal mixture is reduced, but device complexity increases

Engineering Contradiction:
Improvesignal mixture reductionVSAvoidelectrode structure
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The ground electrode is merged with the existing electrode structure by forming it in the same layer as the pixel electrodes using the same material and fabrication process. This integration approach reduces device complexity by eliminating separate ground electrode layers and simplifying the manufacturing process

Inventive Principle:
Principle #5Merging (Combining)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution effectively reduces signal mixture and enhances spatial resolution and color separation by controlling the voltage difference between adjacent pixels, improving the reliability and photoelectric conversion characteristics of the image sensor.

Implementation Method 1

each of the first pixel and the second pixel having a photoelectric conversion film for photoelectrically converting an incident light

Methodology Applied
Scientific EffectPhotoelectric conversion: Photoelectric Effect

Implementation Method 2

signal mixture occurs due to electric capacitive coupling between adjacent pixels

Methodology Applied
Scientific EffectElectric capacitive coupling: Capacitance

Data Source

PatentUS10903279B2Solid state image sensor pixel electrode below a photoelectric conversion film
Publication Date: 2021.01.26 SONY SEMICON SOLUTIONS CORP
  • US10903279B2 patent drawing
  • US10903279B2 patent drawing
  • US10903279B2 patent drawing

AI summary

Provided is a solid state image sensor capable of reducing signal mixture due to electric capacitive coupling between adjacent pixels, a method for manufacturing the same, and an electronic device. A first pixel and a second pixel are adjacently arranged in the solid state image sensor. Each of the first pixel and the second pixel has a photoelectric conversion film for photoelectrically converting an incident light, and a lower electrode arranged below the photoelectric conversion film, and another electrode different from the lower electrodes is provided between the lower electrodes of the first pixel and the second pixel. The present disclosure is applicable to solid state image sensors and the like, for example.