Solid-State Image Sensor Pixel Electrode Wiring for Light Isolation
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Solution Overview
Problem
Solid-state image sensors with vertically stacked photoelectric conversion layers for R, G, and B wavelengths suffer from oblique light intrusion between pixels, leading to color mixture, decreased resolution, and sensitivity loss.
Innovation Solution
Incorporating electrode wiring at the boundaries of adjacent pixels to horizontally and vertically connect photoelectric conversion parts, acting as a light-blocking barrier to prevent light leakage and ensure proper color separation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Illumination intensity
If three photoelectric conversion layers corresponding to R, G, and B wavelengths are stacked vertically in one pixel, then sensitivity is improved and color signals can be generated in one pixel, but oblique incident light enters adjacent pixels causing color mixture and decreased resolution
Solution Approach 1:
The patent introduces separation structures (insulating films and electrode wirings) that divide and isolate adjacent pixels vertically and horizontally. This segmentation prevents oblique light from one pixel from entering adjacent pixels, thereby resolving the color mixture problem while maintaining the stacked three-layer structure for high sensitivity
Solution Approach 2:
The patent applies different structural characteristics to different regions: the interior of each pixel maintains the stacked three-photoelectric conversion layer structure for high sensitivity, while the boundaries between pixels incorporate insulating films and electrode wirings for light isolation. This local differentiation resolves the contradiction between sensitivity and resolution
2Productivity
If pixel size is reduced to increase the number of pixels, then productivity is improved, but sensitivity decreases due to fewer incident photons
Solution Approach 1:
The patent transitions from a planar two-dimensional pixel structure to a three-dimensional stacked structure with photoelectric conversion layers arranged vertically. This dimensional change allows each pixel to capture more photons across different wavelengths without increasing pixel area, thereby maintaining sensitivity while enabling higher pixel density
Solution Approach 2:
Each pixel in the stacked structure performs multiple functions simultaneously: the three photoelectric conversion layers generate R, G, and B color signals within a single pixel, and the electrode wirings serve both electrical connection and light isolation functions. This multi-functionality maximizes the utility of each pixel area
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Prevents light intrusion between pixels, enhancing color accuracy, resolution, and sensitivity by ensuring each pixel captures intended color components effectively.
Implementation Method 1
a first photoelectric conversion part configured to perform photoelectric conversion on the basis of incident light of a first wavelength of three primary colors of light; a second photoelectric conversion part configured to perform photoelectric conversion on the basis of incident light of a second wavelength of the three primary colors of light; and a third photoelectric conversion part configured to perform photoelectric conversion on the basis of incident light of a third wavelength of the three primary colors of light
Data Source
AI summary
The present disclosure relates to a solid-state image sensor and an electronic device enabling prevention of entrance of incident light from adjacent pixels and suppression of color mixture, decrease in resolution, and decrease in sensitivity. In a solid-state image sensor according to one aspect of the present disclosure, each pixel includes: these different photoelectric conversion parts configured to perform photoelectric conversion of light of a first wavelength of light of a second wavelength and a third wavelength respectively. An electrode wiring provided at a boundary of adjacent pixels, horizontally connects an electrode of at least one of the photoelectric conversion parts in one of the adjacent pixels with an electrode of the corresponding one of the photoelectric conversion parts in another of the adjacent pixels and vertically connects with an electrode of at least one of the photoelectric conversion parts of each of the pixels.