Image Sensor Shared Extrinsic Region for Small-Pixel Noise Control

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Solution Overview

Problem

CMOS image sensors face challenges in properly sensing light due to increased integration, leading to noise and reduced optical characteristics, especially as demands for high-resolution images with smaller pixel sizes grow.

Innovation Solution

The design of an image sensor that includes a substrate with photodiodes, a pixel separating pattern, and active patterns that overlap photodiodes, allowing for a shared extrinsic region between selection gates and source follower gates, potentially improving optical characteristics.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If pixel sizes are down-sized to meet high-resolution demands, then the number of pixels increases, but light sensing capability deteriorates and noise increases

Engineering Contradiction:
Improvepixel densityVSAvoidlight sensing capability
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

The patent merges the extrinsic regions of the selection transistor and source follower transistor into a shared region. This consolidation reduces the total area occupied by transistor components, thereby compensating for the reduced light sensing area in downsized pixels while maintaining electrical performance

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The shared extrinsic region serves dual purposes: it functions as the extrinsic region for both the selection transistor and the source follower transistor. This multi-functionality reduces redundant structures and improves light sensing efficiency in compact pixel designs

Inventive Principle:
Principle #6Universality (Multi-functionality)

2Productivity

If pixel sizes are reduced, then integration increases, but noise between elements increases

Engineering Contradiction:
ImproveintegrationVSAvoidnoise
Core Design Contradiction:
ProductivityVSObject-generated harmful factors

Solution Approach 1:

The patent extracts and removes unnecessary portions of the pixel separating pattern between adjacent photodiodes. By selectively removing these separating structures, the design reduces interference and noise between elements while maintaining adequate isolation, thus improving signal quality in high-integration configurations

Inventive Principle:
Principle #2Taking out (Extraction)

3Adaptability or versatility

If additional functions are added to pixels, then functionality increases, but pixel size reduction becomes more constrained

Engineering Contradiction:
ImprovefunctionalityVSAvoidpixel size
Core Design Contradiction:
Adaptability or versatilityVSProductivity

Solution Approach 1:

The patent combines multiple transistor functions into a shared extrinsic region, reducing the area required for additional circuit functions. This enables the inclusion of multiple functions (selection, source follower, reset, etc.) within compact pixel sizes by eliminating redundant structural elements

Inventive Principle:
Principle #5Merging (Combining)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This design potentially improves the optical characteristics and electric characteristics of the source follower transistor, addressing noise and integration issues in CMOS image sensors.

Implementation Method 1

the photodiode may generate an electrical signal that may vary according to an amount of incident light

Methodology Applied
Scientific EffectPhotoelectric effect: Photoelectric Effect

Data Source

PatentUS20250040270A1Image sensor with shared extrinsic region
Publication Date: 2025.01.30 SAMSUNG ELECTRONICS CO LTD
  • US20250040270A1 patent drawing
  • US20250040270A1 patent drawing
  • US20250040270A1 patent drawing

AI summary

An image sensor includes a substrate, a plurality of photodiodes in the substrate, a pixel separating pattern in the substrate separating the plurality of photodiodes, a first active pattern in the substrate at least partially overlapping a first photodiode and a second photodiode from among the plurality of photodiodes, a selection gate on the first active pattern at least partially overlapping the first photodiode, and a source follower gate on the first active pattern at least partially overlapping the second photodiode. The first photodiode is adjacent to the second photodiode. The pixel separating pattern includes a first pixel separating pattern and a second pixel separating pattern disposed between the first photodiode and the second photodiode. The first pixel separating pattern is spaced from the second pixel separating pattern. The first active pattern includes a first extrinsic region disposed between the first pixel separating pattern and the second pixel separating pattern.